WMSIC Electronic Components

Infineon IRF9530NPBF

ModelIRF9530NPBF
PackageTO-220AB
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF9530NPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF9530NPBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
2.967g
Electronic Component
1
Electronic Component
BM0000281006
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
79W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF9530NPBF 产品概述

一、产品简介

IRF9530NPBF 是一款高性能的 P 通道 MOSFET,专为电源管理和高效率应用而设计,具备优良的导电性能和热管理能力。此器件具有最大漏源电压(Vdss)为 100V 和连续漏极电流 (Id) 为 14A 的规格,适合于多种功率电子电路中,如开关电源、电机驱动和充电器应用。基于 Infineon(英飞凌)公司的先进技术,该 MOSFET 提供可靠的性能,能够有效地满足现代电子设备日益增长的功率和效率要求。

二、基本参数

  1. FET 类型:P 通道 MOSFET
  2. 最大漏源电压(Vdss):100V
  3. 25°C 时连续漏极电流 (Id):14A(Tc)
  4. 驱动电压:最大 Rds On,最小 Rds On 为 10V
  5. 最大导通电阻 (Rds On):在 8.4A 和 10V下最大为 200 毫欧
  6. 阈值电压 (Vgs(th)):在 250µA 下最大值为 4V
  7. 栅极电荷 (Qg):在 10V 下最大为 58nC
  8. 栅源电压 (Vgs):最大值为 ±20V
  9. 输入电容 (Ciss):在 25V 下最大为 760pF
  10. 最大功率耗散:79W(Tc)
  11. 工作温度范围:-55°C ~ 175°C(TJ)
  12. 安装类型:通孔(Through-hole)
  13. 封装类型:TO-220AB

三、应用领域

IRF9530NPBF MOSFET 广泛应用于各种电子产品的电源管理,包括但不限于:

  • 开关电源 (SMPS):用于高效电能转换,提升能源使用效率。
  • 电机控制:在直流或步进电机驱动电路中,作为开关元件以控制电机的启停和速度调节。
  • 充电器:在各种充电设备中,IRF9530NPBF 可用于控制充电过程中的电流和电压,以确保充电安全和高效。
  • 线性和开关电源:在电流和电压控制中提供可靠的开关性能,帮助降低整体功耗。

四、技术优势

  1. 高效率:IRF9530NPBF 具有较低的导通电阻和高温稳定性,减少了电能在器件内部的损耗,提高了系统的整体效率。
  2. 宽工作温度范围:这款 MOSFET 可在宽达 175°C 的高温环境下可靠工作,适用于高温和严酷环境条件下的应用。
  3. 优秀的热管理:TO-220AB 封装设计使得 IRF9530NPBF 具备良好的散热性能,有助于增强器件的功率承载能力和可靠性。

五、结论

作为一款高性能 P 通道 MOSFET,IRF9530NPBF 结合了卓越的电气性能和宽广的应用灵活性,为电源管理和高效率设计提供了理想解决方案。其显著的导电特性和优越的热管理能力,确保在各种电气环境中工作的稳定性和可靠性。因此,IRF9530NPBF 是工程师在设计现代电子产品时,值得信赖的选择之一。

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