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Infineon IRF9530NSTRLPBF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRF9530NSTRLPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRF9530NSTRLPBF
- Electronic Component
- 1
- Package
- D2PAK
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 2.014g
- Electronic Component
- 1
- Electronic Component
- BM0000281007
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 79W
- Electronic Component
- Electronic Component
- Electronic Component
- 800
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRF9530NSTRLPBF 产品概述
基本信息
IRF9530NSTRLPBF 是一款高性能的P沟道金属氧化物半导体场效应管(MOSFET)，由全球知名的半导体制造商英飞凌（Infineon）生产。该器件专为要求高可靠性和高效率的电源管理及驱动应用而设计。该MOSFET的主要特点包括高达100V的漏源电压和14A的连续漏极电流，适用于各种电子设备及电路中的开关和放大应用。
产品特性
电气特性：
- 漏源电压（Vdss）高达100V，这使得该器件适合在高压电路中运行，能够有效地支持各种高压应用。
- 其连续漏极电流（Id）可达14A（在适当的散热条件下），为重负载应用提供了强劲的电流承载能力。
- 在电流为8.4A 和栅极驱动电压10V的条件下，最大导通电阻（Rds(on)）为200毫欧，确保了低能耗和高效率的电源转换。
- 栅极阈值电压（Vgs(th)）最大值为4V，在250µA的漏极电流下可以有效开启器件。
驱动电压和电容：
- 该器件的最大栅极驱动电压为±20V，灵活的栅极驱动能力使得其可与多种驱动电路兼容。
- 在25V的漏源电压下，输入电容（Ciss）最大值为760pF，通过合理设计，可以降低输入信号的干扰，改善系统的稳定性。
功率耗散和热特性：
- IRF9530NSTRLPBF的功率耗散能力卓越，在环境温度下（Ta）可耐受最大为3.8W，而在结温（Tc）下最大可达79W。这一特性使得该器件能够在高温环境下正常工作，保证了其长期稳定性和可靠性。
- 该MOSFET可在-55°C到175°C的广泛工作温度范围内运行，适用于高温、高湿等恶劣环境，满足苛刻工业和汽车应用的要求。
封装类型：
- IRF9530NSTRLPBF采用D2PAK（TO-263-3）封装设计，表面贴装型（SMD），便于自动化生产，节省PCB空间。同时，良好的散热性能能够有效支持器件在高负载情况下的稳定性。
应用场景
IRF9530NSTRLPBF因其优良的特性广泛应用于多个领域，主要包括：
- 电源管理：适用于开关电源、DC-DC转换器和高频变换器中，提供高效的电源转换和受控的电源分配。
- 电动机驱动：可用于各种电动机驱动应用中，再结合适当的控制电路，确保电动机的高效和智能控制。
- 汽车电子：满足汽车应用所需的高温和高电压要求，支持汽车内部高度集成的电源分布和电气系统。
- 工业控制：在工控设备和自动化系统中，承载高负载开关，提供稳定的控制解决方案。
总结
IRF9530NSTRLPBF是一款功能强大且灵活的P沟道MOSFET，凭借其高电压、高电流承载能力及出色的导通电阻，广泛适用于各种对电源效率和稳定性有严格要求的应用场景。英飞凌作为半导体行业的领先者，其制造的IRF9530NSTRLPBF确保了可靠的性能和长寿命，为现代电子应用提供强有力的技术支持。
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