WMSIC Electronic Components

Infineon IRF530NPBF

ModelIRF530NPBF
PackageTO-220AB
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF530NPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF530NPBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
1.97g
Electronic Component
1
Electronic Component
BM0000282791
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
70W
Electronic Component
Electronic Component
Electronic Component
1000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF530NPBF 产品概述

IRF530NPBF 是一款由英飞凌(Infineon)公司生产的 N 通道金属氧化物场效应管(MOSFET),广泛应用于各种功率管理和转换应用中。其采用 TO-220 封装,具备高效能和高可靠性的特点,适合在高温和高电压等苛刻环境下工作。

1. 基本参数

  • FET 类型: N 通道 MOSFET
  • 漏源电压(Vds): 最大值为 100V,适合高电压电子电路设计。
  • 连续漏极电流(Id): 在 25°C 时可达 17A(Tc),表现出良好的导电能力,适合用于功率开关电路。
  • 栅极驱动电压: 最大 Rds On 和最小 Rds On 时为 10V,确保器件在高效状态下运作。
  • 导通电阻(Rds(on)): 在 9A 和 10V 时最大可达 90 毫欧,意味着在开关过程中能耗较低,有助于提高整体能效。
  • 栅极阈值电压(Vgs(th)): 最大值为 4V @ 250µA,这一特性使得器件能够在较小的栅电压时导通,便于控制。
  • 栅极电荷(Qg): 在 10V 时最大值为 37nC,影响开关速度和驱动电路要求。
  • 输入电容(Ciss): 最大值为 920pF @ 25V,影响开关频率和信号完整性。
  • 功率耗散(Pd): 最大可达 70W(Tc),显示出良好的热性能,可以有效散热,并防止过热导致的损坏。

2. 工作条件

IRF530NPBF 的工作温度范围广泛,从低至 -55°C 到高达 175°C,确保在不同行业和环境条件下的稳定性与可靠性。这种宽广的温度适应性使其可以被广泛应用于军工、航空和汽车等高要求领域。

3. 应用场景

IRF530NPBF 具有多个应用场景,包括但不限于:

  • 电源开关: 适用于开关电源(SMPS)、变频器及其他电力电子设备。
  • 电机驱动: 作为开关器件,可用于电机控制和驱动电路。
  • DC-DC 转换器: 在高效率 DC-DC 转换中表现优异,适合电池管理系统。
  • 电池充电器: 确保充电过程中的安全性和高效率。
  • 高频开关应用: 适合于高频率的开关操作,能保证快速响应。

4. 封装与安装

IRF530NPBF 采用 TO-220-3 封装,具备良好的散热性能,非常适合通孔板安装。其封装设计能够实现高效的热管理,使得电路设计师在选用时具有更多灵活性。

5. 竞争优势

IRF530NPBF 的竞争优势体现在其卓越的性能参数和广泛的适用性。其低导通电阻、高工作电压及电流能力使其在电力电子领域中具备强大的市场竞争力。同时,英飞凌作为知名半导体制造商,提供可靠的产品质量和技术支持,为客户提供了保障。

总结

IRF530NPBF 是一款性能优异的 N 通道 MOSFET,其稳健的设计、宽广的工作温度范围以及高效的电流和电压处理能力,使其成为各类功率管理应用的理想选择,无论是在家用电器、汽车电子,还是在工业自动化领域,都能发挥出色的性能。选择 IRF530NPBF,便是选择高效的能量管理解决方案。

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