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Infineon IRF5210PBF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRF5210PBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRF5210PBF
- Electronic Component
- 1
- Package
- TO-220AB
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 3.39g
- Electronic Component
- 1
- Electronic Component
- BM0000280997
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 200W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRF5210PBF 产品概述
产品概述 IRF5210PBF是一款高性能的P沟道MOSFET，广泛应用于各种电子电路和功率控制领域。其具有卓越的电气性能，适合高电压和高电流应用。本产品的设计专注于提供出色的导通性能和高效率的开关特性，满足现代电源管理和转换器的需求。
主要规格
- 漏源电压（Vdss）: 100V
- 连续漏极电流（Id）: 40A（在25°C时）
- 栅源极阈值电压（Vgs(th)）: 4V @ 250µA
- 漏源导通电阻（Rds(on)）: 60mΩ @ 24A, 10V
- 最大功率耗散（Ta=25°C）: 200W
- 工作温度范围: -55°C ~ 175°C
- 封装类型: TO-220AB
电气特性 IRF5210PBF在技术参数上表现出色，漏源电压为100V，可以承受高电流（40A）的同时，保持低导通电阻（60mΩ），这使得它在高效能电子电路中极具优势。器件在10V的驱动电压下，能够实现最佳的导通状态，使其在开关电源、逆变器及电机控制等领域表现出色。
温度适应性 IRF5210PBF的工作温度范围广，从-55°C到175°C，适合在极端温度条件下运行，如工业自动化设备、汽车电子等应用。这种高温稳定性使得它在严苛的工作环境中仍然能保持可靠的性能。
封装和安装 该器件采用TO-220AB封装，通孔安装设计便于散热，适合高功率应用。TO-220封装的结构不仅有助于降低热阻，还便于与散热器结合，从而提高整体的电气性能和可靠性。
应用场景 IRF5210PBF主要应用于以下几个方面：
- 电源管理: 在开关电源中充当开关和整流器，提高转换效率，降低能量损失。
- 驱动电路: 适合用于驱动各种负载，如电机、变压器及其他高功率设备。
- 工业自动化: 在PLC控制的自动化系统中，作为控制开关和信号放大器，提供稳定性和高效性。
- 汽车电子: 用于电动汽车的电机驱动和能量回收系统，提升能源利用率。
总结 IRF5210PBF以其优异的电气性能、宽广的工作温度范围及适合的封装设计，成为了高效能电源管理和控制系统中的理想选择。无论是在稳定性还是在功率处理能力上，该MOSFET都展现出极高的可靠性，满足严苛工业及汽车应用的需求。如需在高压或高电流环境下应用MOSFET，IRF5210PBF必将成为您值得信赖的优秀元器件。
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