WMSIC Electronic Components

Infineon IRLML2502TRPBF

ModelIRLML2502TRPBF
PackageSOT-23
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLML2502TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLML2502TRPBF
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.015g
Electronic Component
1
Electronic Component
BM0000286935
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRLML2502TRPBF N沟道MOSFET

基本信息

IRLML2502TRPBF是一款高性能的N沟道MOSFET,专为低电压、高效率的电源管理应用而设计。其关键性能指标包括最高漏源电压(Vdss)为20V、连续漏极电流(Id)为4.2A,非常适合用于多种电子电路中,包括开关电源、低压电机驱动、电池管理系统及负载开关等应用。

电气性能

  1. 漏源电压(Vdss):该器件的最大漏源电压为20V,适用于较低电压的应用场景,为工程师在设计电路时提供了灵活性。

  2. 连续漏极电流(Id):IRLML2502TRPBF在25°C时支持的连续漏极电流为4.2A,使其能够处理较高负载的场合,同时也能满足对电流稳定性的要求。

  3. 栅源极阈值电压(Vgs(th)):该器件的阈值电压为1.2V@250µA,意味着在低电压条件下也能可靠地开启,对于低功耗应用颇为关键。

  4. 导通电阻(Rds(on)):在4.2A, 4.5V条件下,IRLML2502TRPBF的最大导通电阻为45毫欧,这一特性确保了在工作过程中产生的热量非常小,提高了效率并降低了散热要求。

  5. 最大功率耗散:该MOSFET的功率耗散上限为1.25W(Ta=25°C),使其具备在不同负载条件下长时间稳定工作能力。

电气特性变化

IRLML2502TRPBF的导通电阻与栅源电压(Vgs)和漏极电流(Id)相关,设计时可以根据需求选择合适的工作条件。例如,在2.5V和4.5V下的导通电阻值表现出色,同时在Qgs和Qg等参数方面,保证了快速开关和快速响应的能力,这对于高频开启和关闭场合尤其重要。

温度及环境适应性

IRLML2502TRPBF具有广泛的工作温度范围,从-55°C到150°C,确保设备在极端条件下依然能够长期工作而不失效。这一特性特别适合各种苛刻的工业和汽车应用。

封装及安装类型

本型号采用SOT-23(Micro3TM)封装,体积小巧,适合于空间受限的电子设计。表面贴装型设计使得IRLML2502TRPBF易于与现代自动化贴片设备兼容,有助于提高生产效率,并降低生产成本。

应用领域

IRLML2502TRPBF广泛应用于:

  • 便携式设备的功率管理
  • LED驱动电路
  • 电机控制
  • 公共电源布线和开关
  • 电池充电和管理系统
  • 过流保护电路

总结

总的来说,IRLML2502TRPBF是一款高效、结构紧凑且性能优越的N沟道MOSFET,适用于大多数低电压电子设备及其配套的电源管理需求。凭借其优异的电气特性、温度适应性以及适合现代制造的封装设计,IRLML2502TRPBF无疑是当前市场上技术领先和性价比高的产品之一。无论是在设计新产品或是在升级现有设备时,工程师都可以信赖这一优质元件,为他们的产品实现更高的效率和性能标准。

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