WMSIC Electronic Components

Infineon BSC030N08NS5

ModelBSC030N08NS5
PackageTDSON-8(5x6)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BSC030N08NS5
Type
INFINEON
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC030N08NS5
Electronic Component
1
Package
TDSON-8(5x6)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.146g
Electronic Component
1
Electronic Component
BM0183300143
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
139W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
80V
Capacitor(Ciss)
5.6nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSC030N08NS5 MOSFET 产品概述

1. 产品简介

BSC030N08NS5 是一款由英飞凌(Infineon)公司设计和制造的 N 沟道场效应管(MOSFET),其工作电压为 80V,额定电流高达 100A,功耗可达 2.5W。此型号采用 PG-TDSON-8 封装,尺寸为 5x6mm,广泛应用于各种高效能与高功率需求的电子电路中。

2. 主要特点

  • 高功率处理能力:具有 100A 的最大持续电流能够满足高要求应用的需求,确保在严苛环境下的稳定运行。
  • 低导通电阻:该元器件的 RDS(on) 值极低,能够有效减少开关损耗与热量生成,从而提高能效与可靠性。
  • 宽工作电压范围:额定电压为 80V,适用于较高电压的电源管理和转换应用。
  • 优异的开关特性:具备快速的开关速度和良好的频率响应,利于高效的开关电源设计。
  • 紧凑的封装设计:PG-TDSON-8 封装使得PCB空间利用率更高,有助于减小设备体积,提高设计灵活性。

3. 应用场景

BSC030N08NS5 适用于多种电子应用,包括但不限于:

  • 电源管理:广泛用于服务器、工业电源和电源适配器中,以实现高效的功率转换与管理。
  • 电机驱动:最佳解决方案之一,适合在电动汽车、电动工具以及其他电机驱动应用中作为开关元件。
  • LED驱动电路:提供即时开关能力,有效控制LED照明系统的性能与效果。
  • DC-DC 转换器:相对高电流和高电压的应用,使得该 MOSFET 成为理想的选择,确保转换过程高效且稳定。

4. 规格参数

  • 类型:N沟道MOSFET
  • 最大直流电压:80V
  • 最大连续漏电流:100A
  • 功耗:2.5W
  • 封装类型:PG-TDSON-8(5x6mm)
  • 工作温度范围:-40℃ 至 +150℃
  • RDS(on):具体值需参考数据手册,通常在不同行业标准中较低。

5. 设计考虑

在设计电路时,工程师需要特别关注 BSC030N08NS5 的散热管理。由于其高电流输出特性,合理的散热设计将有助于延长MOSFET的使用寿命。此外,在电路设计中需要配置适当的驱动电路,以确保MOSFET可快速开关,进而优化整机效率。

6. 竞争优势

选择英飞凌的 BSC030N08NS5,设计师将受益于该公司在半导体领域的长期技术优势和行业经验。它的高可靠性、高效率及广泛的应用灵活性,使得这个 MOSFET 成为现代电子设计中的热门选择。

结语

综上所述,BSC030N08NS5 是一款兼具高效率与高电流承载能力的 N 沟道 MOSFET,适合多种电源管理及电机驱动应用。其低导通电阻和优异的开关特性,将为各种高性能电子设备提供理想的解决方案。无论在设计新设备还是升级现有产品时,此款 MOSFET 都将是工程师们的首选。

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