WMSIC Electronic Components

Infineon IRLML0060TRPBF

ModelIRLML0060TRPBF
PackageSOT-23
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLML0060TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLML0060TRPBF
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0000282804
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRLML0060TRPBF MOSFET

1. 基本信息

IRLML0060TRPBF 是一款高性能的 N 沟道 MOSFET,专为各种电子应用而设计,具备优异的导电性能和热管理能力。其关键参数包括:漏源电压(Vdss)最大为 60V,连续漏极电流(Id)在 25°C 下可达 2.7A,并能够有效承受高达 1.25W 的功耗。该器件适用于广泛的工作温度范围,从 -55°C 到 150°C,有利于在严苛环境条件下的稳定运行。

2. 技术规格

  • 漏源电压 (Vdss): 60V
  • 连续漏极电流 (Id): 2.7A (在 25°C 时)
  • 栅源极阈值电压 (Vgs(th)): 2.5V @ 25µA
  • 漏源导通电阻 (Rds On): 92 mΩ @ 2.7A, 10V
  • 最大功率耗散: 1.25W (Ta=25°C)
  • 驱动电压: 适用范围为 4.5V 到 10V
  • 栅极电荷 (Qg): 2.5nC @ 4.5V
  • 输入电容 (Ciss): 290pF @ 25V
  • Vgs (最大值): ±16V
  • 工作温度范围: -55°C 至 150°C

3. 封装及安装

IRLML0060TRPBF 采用 SOT-23(Micro3)的封装形式,封装类型为 TO-236-3,SC-59,SOT-23-3。这种紧凑的表面贴装封装设计能够有效节省电路板空间,适合于需要高功率密度和小型化的电子设备。

4. 性能特点

作为一款 MOSFET,IRLML0060TRPBF 显示出极低的导通电阻,使其在导通状态下损耗最小,提高了转换效率。这特别适用于电源管理、马达驱动和开关电源等应用。栅源极阈值电压的合理范围保证了 MOSFET 在各类低电压信号控制下的良好响应,用户可以在符合电压要求下安全驱动此元器件。

5. 应用领域

IRLML0060TRPBF 的优越性能使其在多个领域得到了广泛应用,包括但不限于:

  • 电源管理: 作为开关元件,IRLML0060TRPBF 能够有效控制功率并减少损耗。
  • 自动化设备: 在电机控制和驱动电路中,此 MOSFET 可用于高频开关应用,提升系统效率。
  • 消费电子: 适用于智能手机、平板电脑和其它嵌入式系统,如开关电源、LED 驱动和电池管理系统。
  • 汽车电子: 在现代汽车中应用于电池管理和电源转换中,满足汽车行业对高可靠性的需求。

6. 结论

IRLML0060TRPBF 是一款集高效能与小型化于一体的 N 沟道 MOSFET,凭借其卓越的电气特性和宽广的工作温度范围,适应多种复杂应用场景。从电源管理到电动机控制,它均能提供可靠的解决方案。对于寻求高性能和高效能组件的设计工程师而言,IRLML0060TRPBF 绝对是一个值得考虑的优质选择。

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