WMSIC Electronic Components

Infineon IRFR220NTRPBF

Infineon IRFR220NTRPBF
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Product image

ModelIRFR220NTRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFR220NTRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFR220NTRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.53g
Electronic Component
1
Electronic Component
BM0000281216
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
43W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：IRFR220NTRPBF

产品简介
IRFR220NTRPBF是一种高性能的N沟道MOSFET，具有优异的电气特性和热性能，特别适用于高压和高效率的开关电源、DC-DC变换器、电机驱动以及其他功率管理应用。该器件由知名半导体制造商英飞凌（Infineon）设计和生产，封装形式为TO-252-3（DPAK），旨在满足现代电子设备对性能和可靠性的高要求。

关键规格

  • 封装/外壳: TO-252-3（DPAK），带有2个引线和接片，适合表面贴装（SMT）。
  • FET类型: N沟道MOSFET，具备更强的导电能力和低开关损耗。
  • 漏源极电压（Vdss）: 200V，确保在高压环境下的可靠操作。
  • 电流能力: 在25°C时，连续漏极电流（Id）可达5A（Tc）。
  • 驱动电压: 10V下，可以实现最小Rds(on)，保证高效导通。
  • 导通电阻: 在2.9A时，最大导通电阻（Rds(on)）为600毫欧，降低了电能损耗。
  • 输入电容（Ciss）: 最大值为300pF@25V，确保快速开关速度。
  • 功率耗散: 最大功率耗散为43W（Tc），适应高功率应用的需求。
  • 工作温度范围: 可在-55°C至175°C的广泛温度范围内稳定工作，适合恶劣环境。
  • 栅极电荷（Qg）: 最大值为23nC@10V，低栅极电荷有助于提高开关速度和效率。

应用场景
IRFR220NTRPBF能够广泛应用于多种电力电子设备中，特别是需要高功率和高效率的领域：

  1. 开关电源：在AC-DC和DC-DC转换器中应用，降低开关损耗，提高能效。
  2. 电机驱动：适用于无刷直流电机（BLDC）和步进电机的驱动方案。
  3. 功率调节：在电源管理系统中实现高效的能量转换和调节。
  4. LED驱动：用于高效的LED照明解决方案，确保高流密度和稳定性。

电气特性分析
该MOSFET的最大脉冲电流和漏电压特性使其能够处理瞬态负载和高压波动。低导通电阻和高功率耗散能力确保其在长时间运行时不会过热，从而提高系统的可靠性和效率。此外，其宽工作温度范围使得IRFR220NTRPBF能够在极端环境下安全工作，是要求严格的工业应用的理想选择。

总结
总而言之，IRFR220NTRPBF是一款性能卓越、可靠性强的N沟道MOSFET，适应性广泛，适合多个领域的应用。通过其优异的规格和设计，用户可以利用该器件实现高效的电能管理和系统优化。无论是在新设计的硬件开发中，还是在升级现有设备时，IRFR220NTRPBF都是一个值得考虑的优质选择。

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