WMSIC Electronic Components

Infineon IRFH7004TRPBF

ModelIRFH7004TRPBF
PackagePQFN-8(4.9x5.8)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFH7004TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFH7004TRPBF
Electronic Component
1
Package
PQFN-8(4.9x5.8)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.2g
Electronic Component
1
Electronic Component
BM0093065125
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
156W
Electronic Component
Electronic Component
Electronic Component
4000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRFH7004TRPBF

概述

IRFH7004TRPBF是一款高性能的N沟道金属氧化物半导体场效应管(MOSFET),其设计旨在满足高功率、高效能电子项目中的需求。该MOSFET适用于广泛的应用,如电源管理、直流-直流转换器、电动机驱动、电池管理系统等。该器件由英飞凌(Infineon)制造,具有出色的热性能和导通能力,能够在苛刻环境中稳定运行。

关键特性

  • 漏源电压(Vdss):最高可承受40V的漏源电压,使其适用于许多低压应用场景。
  • 连续漏极电流(Id):在25°C时,器件能够持续承载高达100A的漏极电流,特别适用于高电流环境。
  • 导通电阻(Rds(on)):在10V的驱动电压下,导通电阻低至1.4mΩ(@100A),这使得MOSFET表现出优异的功率损耗特性,以降低在传输电流过程中产生的热量。
  • 栅源极阈值电压:Vgs(th)为3.9V时,提供稳定的开/关切换能力,适用于各种前端驱动设计。
  • 最大功率耗散:在环境温度25°C下,最大功率耗散可达156W,确保在高负载条件下的可靠性。
  • 工作温度范围:该MOSFET的工作温度范围广泛,从-55°C到150°C,适合极端环境应用。

电气性能

IRFH7004TRPBF具备卓越的电气性能,以下是一些关键电气参数:

  • 输入电容(Ciss):最大输入电容为6419pF(@25V),在高频应用中有助于减少开关损耗。
  • 栅极电荷(Qg):在10V的驱动电压下,最大栅极电荷为194nC,这意味着在开关过程中所需的驱动能量较少,提升了整体转换效率。

封装与安装

该MOSFET采用PQFN-8(5x6mm)封装,是一种表面贴装型元件。该封装设计有助于优化散热性能和电气连接性,适合高密度电路板设计。裸露焊盘的设计也极大地提升了散热面积,使得工作在高电流情况下的热管理更加高效。

应用领域

IRFH7004TRPBF主要应用于以下领域:

  • 电源管理:如开关电源和线性电源中,MOSFET提供快速切换能力以及低导通损耗。
  • 电动机驱动:用于电机驱动器电路中,能够承受高启动电流并保持稳定性。
  • 电池管理系统:MOSFET可以用于电池的充放电管理,维护电池的健康和性能。
  • LED驱动:用于高效的 LED 驱动电路,实现有效的电流控制和热管理。

结论

综上所述,IRFH7004TRPBF是一款高效、可靠的N沟道MOSFET,适用于多种高功率应用。其低导通电阻、宽工作温度范围以及较高的功率耗散能力使得它在各种苛刻环境中表现出色。无论是在电源管理还是电动机控制领域,该器件都展现了优异的性能和可靠性,是设计人员的理想选择。

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