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Infineon IPB042N10N3G
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IPB042N10N3G
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IPB042N10N3G
- Electronic Component
- 1
- Package
- TO-263-3
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.028g
- Electronic Component
- 1
- Electronic Component
- BM0000280988
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 214W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IPB042N10N3G N沟道MOSFET
IPB042N10N3G是由全球知名的半导体制造商Infineon（英飞凌）出品的一款N沟道场效应管（MOSFET）。该器件特别设计用于需要高电流和高电压的应用场合，具备出色的性能表现。下面将对这款MOSFET进行详细的介绍，包括其基本参数、工作特性及应用场景。
基本参数
漏源电压（Vdss）：100V
IPB042N10N3G能够承受高达100伏特的漏源电压，使其非常适用于高电压的电源转换和电机控制应用。连续漏极电流（Id，25°C时）：137A
在25°C的环境温度下，器件能够支持连续流过高达137安的电流，这意味着它能够处理高功率应用而不会发生过热或失效。栅源极阈值电压：3.5V @ 150µA
此参数指明了MOSFET激活的电压要求，3.5V的阈值电压确保器件能够在较低的控制电压下高效开关，适合与微控制器或其他逻辑电平信号直接兼容。漏源导通电阻：4.2mΩ @ 100A, 10V
低导通电阻意味着在导通状态下功耗极小，提高了整体效率。尤其在高电流应用中，低导通电阻有助于减少热损耗和提高系统的可靠性。最大功率耗散（Ta=25°C）：214W
该组件的最大功耗为214瓦特，保证其在高负载下的稳定工作，适用于各种高负载电源和转换器。封装类型：PG-TO-263-3
TO-263封装形式提供了优良的热管理性能，适合于高功率应用，便于多种电路布局设计。
应用领域
基于其优秀的电气特性，IPB042N10N3G广泛应用于多个领域，包括但不限于：
电源管理：在开关电源（SMPS）、DC-DC转换器中作为主开关元件，以提高转换效率及降低功耗。
电机驱动：在各种电机驱动系统中，优异的散热性能和高电流承载能力使得该元件非常适合用于直流电机和步进电机控制。
逆变器：在光伏逆变、风能发电等可再生能源应用中，作为电能转换的关键元件，确保高效电力传输。
汽车电子：在电动车及其充电系统中，IPB042N10N3G能够支持高电压和高电流的工作条件，助力电动汽车的推进与充电管理。
消费电子：在各种消费类电子产品中，如高效能证书电源和充电器，利用其低导通电阻和高功率能力来优化散热和功率效率。
总结
总之，IPB042N10N3G N沟道MOSFET是一个性能卓越、高效能的电子元器件，凭借其优越的电气特性和丰富的应用场景，为电子工程师提供了理想的解决方案。无论是在工业领域的高功率转换，还是在消费电子中的节能应用，都展示了其良好的适应性与可靠性。选择IPB042N10N3G，将有效推动项目的高效运行和性能提升。
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