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Infineon BSC160N15NS5
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon BSC160N15NS5
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSC160N15NS5
- Electronic Component
- 1
- Package
- TDSON-8(5x6)
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.147g
- Electronic Component
- 1
- Electronic Component
- BM0000280739
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 96W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 150V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BSC160N15NS5 N沟道MOSFET
产品简介
BSC160N15NS5是英飞凌公司推出的一款高性能N沟道场效应晶体管（MOSFET），专为高效能电力转换和开关应用而设计。该器件具有超低的导通电阻和高的漏极电流承受能力，非常适合用于各种电力电子应用，包括但不限于DC-DC转换器、马达驱动、变频器及其他高频开关电源。
基本参数
- 漏源电压（Vdss）: 150V
- 连续漏极电流（Id）: 56A（在25°C时）
- 漏源导通电阻: 16mΩ（在28A和10V下）
- 栅源极阈值电压: 4.6V（在60μA下）
- 最大功率耗散: 96W（在环境温度25°C时）
- 封装类型: TDSON-8 (尺寸：5.9mm x 5.2mm)
性能特点
高效率
BSC160N15NS5采用的先进制造工艺，使其具备超低导通电阻（16mΩ），在高电流流过时能显著降低功耗和发热，从而提高系统的整体效率。宽电压范围
最高可承受150V的漏源电压，使其适用于多个高压电源管理应用，具备足够的电压裕度以应对电源波动。高电流承载能力
在25°C的情况下，该器件的连续漏极电流可达到56A，适用于需要大电流处理的电力系统，如电动机驱动和工业应用。出色的热性能
96W的最大功率耗散能力使得该MOSFET能够在严苛环境中稳定工作。其TDSON-8封装设计优化了散热性能，确保器件在高负载下的可靠性。灵活的工作参数
其栅源极阈值电压为4.6V，保证了所需的驱动电压较为灵活，适用于多种控制电路设计，并且可以方便地与其他元器件集成。
应用场景
BSC160N15NS5适用于多种电力电子应用领域，包括但不限于：
- DC-DC转换器：在电源模块中作为开关元件，提供高效的电压转换。
- 电动机驱动：为电动机提供高效的驱动信号，减少能耗，提高效率。
- 变频器：在变频器中用作高频开关元件，有效控制电机速度与扭矩。
- 开关电源（SMPS）：在开关电源中作为主要开关元器件，提升电源转换过程的效率。
总结
总体而言，BSC160N15NS5是一款高效率、高性能的N沟道MOSFET，凭借其优异的电气性能和热管理特性，使其在现代电力电子应用中占据了重要地位。无论是在通信、电动汽车、工业电源还是消费电子产品中，该器件都是设计师们可靠的选择，能够有效降低能耗并提升整体系统效率。
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