WMSIC Electronic Components

Infineon IRLR3410TRPBF

ModelIRLR3410TRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLR3410TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLR3410TRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.64g
Electronic Component
1
Electronic Component
BM69414614
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
79W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRLR3410TRPBF N沟道MOSFET

概述

IRLR3410TRPBF是一款高性能的N沟道MOSFET,专为高效率的电源管理与开关应用而设计。该器件由英飞凌(Infineon)制造,采用表面贴装型(SMD)封装,型号为TO-252-3(DPAK)。随着电子设备对电源转换效率的不断提高,这款MOSFET因其优异的性能被广泛应用于各种领域,包括电源适配器、电机驱动、开关电源和电池管理系统等。

关键特性

  1. 高漏源电压(Vdss):该MOSFET的漏源电压可高达100V,能够轻松应对高压电源应用,适合在高电压场合下的稳定工作。

  2. 高持续漏极电流(Id):在25°C的环境温度下,IRLR3410可以承受高达17A的连续漏极电流,满足球源和负载需求。

  3. 低导通电阻(Rds On):在10V的Vgs驱动电压条件下,MOSFET的最大导通电阻可低至105毫欧。这确保了在开关操作时极低的功率损耗,从而降低了设备的整体热量生成,提高了系统的效率。

  4. 宽栅极电压范围(Vgs):IRLR3410的栅极驱动电压最大可达到±16V,适应多种控制电路的需求,增强了设计的灵活性。

  5. 优异的输入电容:在25V下,该MOSFET的输入电容(Ciss)最大为800pF,确保了快速开关响应,使其在高频应用中表现出色。

  6. 高功率耗散:IRLR3410的最大功率耗散能力为79W,能够在高功率应用环境中稳定运行,充分保证了安全性。

  7. 广泛的工作温度范围:器件的工作温度范围为-55°C至175°C,适合在极端环境下使用。无论是在严寒或高温条件下,该MOSFET都能提供可靠的性能。

  8. 小型封装:采用TO-252-3(DPAK)封装,IRLR3410具有良好的散热能力,适合各种空间受限的应用。

应用领域

IRLR3410TRPBF的优异特性使其在多个高效能应用中成为理想选择:

  • 电源转换器:可用于高效DC-DC转换器和AC-DC电源适配器,提供更高的能效和更少的热损失。
  • 电动机驱动器:在电机控制应用中,能够有效驱动直流电动机与步进电机,达到快速响应与高效率的要求。
  • 电池管理系统:在电池充电与放电过程中,IRLR3410保证了输出电流和电压的可靠性及安全性。
  • 开关电源:能够帮助设计出更小、更轻的开关电源,适应不断减少体积与重量的市场需求。

结论

IRLR3410TRPBF是一款多用途、性能卓越的N沟道MOSFET,专为满足现代电子设备对高效能和可靠性的需求而设计。其低导通电阻、高功率容量和广泛的工作温度范围使其成为理想的选择,适合各类需要高电压和高电流的应用。选择IRLR3410TRPBF,能够显著提高电源系统的整体性能,满足不断进步的技术需求。

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