WMSIC Electronic Components

Infineon IRF7842TRPBF

ModelIRF7842TRPBF
PackageSO-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon IRF7842TRPBF
Type
INFINEON
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF7842TRPBF
Electronic Component
1
Package
SO-8
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.117g
Electronic Component
1
Electronic Component
BM0224143278
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
4000
Voltage(Vdss)
40V
Capacitor(Ciss)
4.5nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRF7842TRPBF MOSFET

IRF7842TRPBF是一款高性能的N沟道MOSFET,专为高效能应用设计,具有优越的电气特性和广泛的工作温度范围。它是英飞凌(Infineon)公司的一款优质产品,主要面向电源管理、开关电源、驱动电机、LED照明以及其他需要高效率开关控制的应用场景。

关键参数与特性

  1. 漏源电压(Vdss): IRF7842TRPBF的漏源电压高达40V,适合用于大多数低中压应用。其高的耐压特性使得它在设计中具有良好的安全性和灵活性。

  2. 连续漏极电流(Id): 该元件在25°C环境温度下,能够承载最大18A的连续漏极电流,能够满足高电流应用的需求。这使得IRF7842TRPBF在高负载情况下表现优异。

  3. 导通电阻(Rds(on)): 在10V及17A的条件下,IRF7842TRPBF的最大导通电阻仅为5毫欧,这为降低功耗和发热提供了良好的条件,提升了系统的整体效率。

  4. 驱动电压(Vgs): IRF7842TRPBF支持多种驱动电压选项,在4.5V和10V下表现优异,能够适应多种驱动电路的需求。此外,其栅极阈值电压(Vgs(th))的最大值为2.25V,意味着其在较低的栅极电压时即可开启,有利于减少控制电路的功耗。

  5. 栅极电荷(Qg): 栅极电荷为50nC @ 4.5V,较低的栅极电荷特性使得开关速度快,适用于高频开关应用,减少了在快速开关过程中由于充电和放电造成的能量损耗。

  6. 热管理: IRF7842TRPBF的功率耗散能力高达2.5W,并且其工作温度范围从-55°C到150°C。这一宽温度范围确保在极端环境下的可靠性,适合于军事、航空航天等特殊应用。

  7. 封装形式: 该器件采用8-SO封装,外形紧凑,方便进行表面贴装,适合现代电子设备的小型化需求。

应用场景

IRF7842TRPBF因其众多优良的特性,被广泛应用于:

  • 电源管理: 用于DC-DC转换器、开关电源等,能有效提高转换效率,减少能耗。
  • 电动机控制: 在电动机驱动中,作为开关元件使用,能够快速响应控制信号,实现高效精确的电机调节。
  • LED驱动: 由于其快开关特性,适合用于LED驱动电路,能够提升灯具的工作效能和寿命。
  • 高频开关电路: 应用于高频电路中,可降低开关损耗,提高整体性能。

总结

IRF7842TRPBF是一款在其类别中性能优越的N沟道MOSFET,具有40V的漏源电压、18A的持续电流、极低的导通电阻及良好的工作温度范围,适合于各种高效能电源应用。无论是在电动机控制、高频开关还是电源管理领域,IRF7842TRPBF都能为设计者提供可靠的解决方案,帮助他们提升产品的整体性能和能效。在选择符合您需求的MOSFET时,IRF7842TRPBF无疑是一个值得考虑的优秀选择。

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