WMSIC Electronic Components

Infineon IRF3205STRLPBF

ModelIRF3205STRLPBF
PackageD2PAK
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF3205STRLPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
800 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF3205STRLPBF
Electronic Component
1
Package
D2PAK
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.343g
Electronic Component
1
Electronic Component
BM0000282788
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
200W
Electronic Component
Electronic Component
Electronic Component
800

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF3205STRLPBF 产品概述

产品名称: IRF3205STRLPBF
类型: N 通道 MOSFET
封装: D2PAK

一、产品简介

IRF3205STRLPBF 是一款高性能 N 通道金属氧化物半导体场效应晶体管 (MOSFET),由英飞凌(Infineon)公司生产,采用卓越的材料和制造工艺,提供出色的电气性能。该元器件广泛应用于各类电力电子设备中,包括开关电源、DC-DC 转换器、电机驱动等领域。

二、关键参数

  1. 漏源电压 (Vdss): 55V

    • IRF3205STRLPBF 在额定条件下能够承受的最大漏源电压为 55V,适用于中等电压的驱动应用。
  2. 连续漏极电流 (Id): 110A(Tc)

    • 在适当的散热条件下,该 MOSFET 可连续处理高达 110A 的电流,能够满足高负载场景的需求。
  3. 导通电阻 (Rds On): 最大 8 毫欧 @ 62A,10V

    • 该器件在 10V 栅极驱动下表现出极低的导通电阻,这在动态转换和功率损耗管理中至关重要。
  4. 栅源阈值电压 (Vgs(th)): 最大 4V @ 250µA

    • 该阈值电压确保了 MOSFET 在较低的栅极驱动电压下就能实现开关操作,提高了电源设计的灵活性。
  5. 栅极电荷 (Qg): 最大 146nC @ 10V

    • 较低的栅极电荷值效果意味着快速开启和关闭速度,能够提高开关频率,减少功率损耗。
  6. 功率耗散: 最大 200W(Tc)

    • 该 MOSFET 的热管理能力强,能够适应高功率应用的散热需求,减少因过热引起的器件失效。
  7. 工作温度: -55°C ~ 175°C(TJ)

    • 宽广的工作温度范围,适合多种环境下的应用,使得 IRF3205STRLPBF 适用于汽车、工业设备及军用电子等要求苛刻的场合。

三、应用场景

IRF3205STRLPBF 的广泛应用涵盖了多个领域:

  • 开关电源: 在开关电源中,IRF3205STRLPBF 可有效控制电流和电压,为负载提供稳定的电源,并且减少能量损耗。
  • DC-DC 转换器: 其高效率和大电流处理能力,使得该 MOSFET 成为可再生能源和电池管理系统中非常理想的选择。
  • 电机驱动: 由于其高电流承载能力,IRF3205STRLPBF 可用于电动机的驱动与控制,提高系统的性能。
  • 逆变器: 在太阳能和风能逆变器中使用,确保高效的电能转换和良好的耐温特性。
  • 电压稳压器: 其低 Rds On 特性使其在电压稳压器电路中发挥重要作用,提供高效稳定的输出电压。

四、封装与安装

IRF3205STRLPBF 的 D2PAK(TO-263-3)封装形式使得其在电路板上安装方便,同时其较大的散热面设计可以有效带走热量,提升器件的可靠性。D2PAK 的表面贴装设计有效节省了电路板空间,适合密集型布局。

五、总结

综上所述,IRF3205STRLPBF 是一款性能优越的 N 通道 MOSFET,具备高负载能力、低导通电阻和宽广的工作温度范围。它在电源管理、自动化控制以及工业应用中拥有良好的表现与适用性,凭借英飞凌的可靠性和先进制造技术,为各种电力电子设计提供了理想的解决方案。

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