WMSIC Electronic Components

Infineon IRF630NPBF

Infineon IRF630NPBF
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Product image

ModelIRF630NPBF
PackageTO-220AB
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF630NPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF630NPBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.75g
Electronic Component
1
Electronic Component
BM0000280999
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
82W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF630NPBF 产品概述

基本信息

IRF630NPBF 是一款高性能的N型金属氧化物半导体场效应管（MOSFET），其主要优点在于其优异的电流处理能力和高压特性，广泛应用于电源管理、开关电源和电机驱动等多种领域。该器件遵循符合环境及机械要求的TO-220AB封装设计，搭配出色的散热性能，非常适合高功率应用。

主要参数

  • FET 类型：N 通道
  • 技术：MOSFET（金属氧化物半导体）
  • 漏源电压（Vdss）：200 V，确保在高压应用中的可靠性。
  • 连续漏极电流（Id）：在25°C条件下，提供高达9.3 A的连续电流能力，非常适合需要较大功率输出的应用。
  • 驱动电压：本产品在10V的驱动电压下，实现最小Rds(on)，使其在开关状态下具有超低的导通电阻。
  • 导通电阻（Rds(on)）：在5.4 A和10 V的条件下，最大导通电阻为300毫欧，符合高效率要求，减少能量损耗。
  • Vgs(th)（栅极阈值电压）：在250 µA流过时最大为4 V，确保与常见数字电路的兼容性。
  • 栅极电荷（Qg）：最大Qg为35 nC（@10V），表明其在开关操作时所需的驱动功率相对较低。
  • Vgs（最大值）：支持±20 V的栅极驱动能力，增加了设计的灵活性。
  • 输入电容（Ciss）：在25V条件下，最大输入电容为575 pF，说明其对输入信号的响应速度较快。
  • 功率耗散：在Tc的条件下，该器件最大功率耗散为82W，适合多个工业电力电子应用。
  • 工作温度范围：-55°C ~ 175°C的工作温度范围，使其能够在极端环境下稳定运行，非常适合高温和低温环境。
  • 封装：TO-220AB封装不仅支持通孔安装，更具出色的散热能力，方便安装在各种电路板上。

应用场景

IRF630NPBF 主要应用于以下几个领域：

  1. 开关电源：由于其高效率和低导通电阻，其能够有效地减少开关损耗，非常适合用于高频开关电源设计。
  2. 电机控制：MOSFET的快速开关特性使其在电机驱动电路中能够有效控制电流，具有较好的调速性能。
  3. 电源放大器：该MOSFET的高压和高电流能力使其在音频放大器和其他类放大器应用中表现出色。
  4. 功率转换器：其杰出的功率处理能力使其成为各种DC-DC和AC-DC转换器的理想选择。
  5. LED驱动：在LED照明应用中，如高功率LED驱动，IRF630NPBF的低Rds(on)确保了驱动电流的高效利用。

性能优势

选择IRF630NPBF的优势在于其高耐压、高电流能力和广泛的工作温度范围，这保证了设备即便在苛刻的工作条件下，仍能保持优异的功能表现。此外，其出色的开关性能意味着更高的效率和更长的整体设备寿命，符合当今对高性能电子日益增强的需求。

总结而言，IRF630NPBF是一款综合性能出众的MOSFET，适用于各种高功率和高效率的电子应用，适合电子设计工程师在产品开发过程中的优先选择。

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