WMSIC Electronic Components

Infineon IRFR5410TRPBF

ModelIRFR5410TRPBF
PackageDPAK(TO-252AA)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFR5410TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFR5410TRPBF
Electronic Component
1
Package
DPAK(TO-252AA)
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.4g
Electronic Component
1
Electronic Component
BM0000281219
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
66W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFR5410TRPBF 产品概述

IRFR5410TRPBF 是一款由英飞凌 (Infineon) 出品的高性能 P沟道 MOSFET,广泛应用于电源管理和开关电源设计中。该元器件采用TO-252-3(DPAK)封装,具有优良的散热性能和机械强度,适合表面贴装(SMD)技术。这款MOSFET的主要特点包括高耐压、高电流承载能力以及宽广的工作温度范围,使其在各种电路设计中表现出色。

主要参数

  1. 漏源电压(Vdss): IRFR5410TRPBF 的漏源电压可高达100V,适合多种高压应用,包括电源开关、电机驱动和大功率负载控制等。

  2. 连续漏极电流(Id): 在25°C的环境条件下,该元器件能够承载连续漏极电流13A,适合高功率应用。此外,它的最大功率耗散在25°C环境下达66W,显示出良好的热管理能力。

  3. 导通电阻(Rds On): 在7.8A及10V的栅源电压下,该MOSFET的漏源导通电阻为205毫欧,表明其具有较低的导通损耗,有助于提高系统效率并降低热量产生。

  4. 栅源极阈值电压(Vgs(th)): 该元器件的栅源极阈值电压为4V @ 250 µA,此特性使得它在较低的栅源电压下就能迅速导通,从而提高开关频率及响应速度。

  5. 栅极电荷(Qg): 在10V的栅源电压下,栅极电荷为58nC,较低的栅极驱动电荷有利于实现快速开关,降低驱动电路的功耗。

  6. 输入电容(Ciss): 在25V时,该器件的输入电容最大为760pF,表明其良好的高频特性,在快速开关环境中表现更加优秀。

  7. 工作温度范围: IRFR5410TRPBF支持-55°C至150°C的工作温度范围,适合各种工业和汽车应用环境。

应用场景

IRFR5410TRPBF 被广泛应用于多种场合,包括但不限于:

  • 开关电源: 由于其优异的导电性能和低导通电阻,适用于AC-DC和DC-DC转换器中的开关元件。
  • 电机驱动: 在电动机控制系统中,IRFR5410TRPBF能够在切换速度和功率密度上表现出色,适合步进电机和直流电机的驱动。
  • 电源管理: 适合用于负载开关、过流保护等功能,与其他元器件组合可实现高效的电源管理方案。
  • 汽车电子: 考虑其宽泛的工作温度范围和高耐压能力,可以在汽车的功率控制系统中提供可靠的解决方案。

结论

总的来说,IRFR5410TRPBF 是一款高效可靠的 P沟道 MOSFET,凭借其优越的电流承载能力、导通性能和高温稳定性,适合各种高性能应用。英飞凌作为全球领先的半导体供应商,确保了这一系列产品在质量和可靠性上的卓越表现,为设计工程师在电源解决方案开发中提供了强大的支持和灵活性。无论在消费类电子、工业自动化还是车辆电气系统中,IRFR5410TRPBF 都是一个值得选择的可靠组件。

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