WMSIC Electronic Components

Infineon BSC072N08NS5

ModelBSC072N08NS5
PackageTDSON-8(5x6)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BSC072N08NS5
Type
INFINEON
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC072N08NS5
Electronic Component
1
Package
TDSON-8(5x6)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.17g
Electronic Component
1
Electronic Component
BM0166527303
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
69W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
80V
Capacitor(Ciss)
2.1nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:BSC072N08NS5

在现代电子设计中,场效应管(MOSFET)是实现高效能和节能的重要器件之一。BSC072N08NS5是由英飞凌(Infineon)推出的一款N沟道MOSFET,具备卓越的电气性能和广泛的应用场景。该器件的主要特点和技术参数使其非常适用于电源管理、DC-DC转换器和电机驱动等高功率应用。

1. 产品特性

BSC072N08NS5具有以下显著特性:

  • 功耗与功率等级:该MOSFET的额定功率为2.5W,能够处理高达74A的电流,适合需要高电流和高功率的应用场景。
  • 耐压等级:该器件的最大耐压为80V,非常适合在中高压应用中使用,包括汽车电子和工业设备。
  • N沟道结构:N沟道MOSFET具有较低的导通阻抗(RDS(on)),在开关状态下能够提供优秀的电流传导能力,从而降低功耗和热量产生。

2. 封装与尺寸

BSC072N08NS5采用PG-TDSON-8封装,尺寸为5.2mm x 5.9mm,具有良好的散热性能和小体积特点。8个引脚的设计提高了器件的接合强度,减少了电感,适合于紧凑的电路设计。

封装设计还使得BSC072N08NS5能够支持更高的工作温度,为设计者提供了更大的灵活性。此外,DFN封装不仅减小了占板面积,还改善了电气性能,对高频应用尤其有效。

3. 性能指标

  • 导通阻抗(RDS(on)):BSC072N08NS5的导通阻抗极低,这意味着在开启状态下,它的能量损失微乎其微,从而提高了系统的整体效率。
  • 开关速度:该MOSFET的开关速度快,有助于提高电源转换效率和减少功耗。
  • 热性能:凭借高效的热管理特性,BSC072N08NS5在高负载下工作时能够很好地降低热量累积,避免因过热而损坏,有效延长了电路的使用寿命。

4. 应用场景

BSC072N08NS5适用于多种应用,特别是在需要高功率、高效率开关的电路中。主要应用包括:

  • DC-DC转换器:该器件可用于降压或升压电源转换,可有效降低转换损失,提高系统效率。
  • 电机控制:在电机驱动电路中,BSC072N08NS5可以作为开关器件,控制电流流向,从而实现精准的电机控制。
  • 汽车电子:由于其高耐压和高电流特性,适合用于电动汽车或混合动力汽车的动力系统中。
  • LED驱动:在LED照明设备中,可以用作开关元件,有助于实现高效的LED驱动方案。

5. 总结

总的来说,BSC072N08NS5是英飞凌推出的一款性能卓越的N沟道MOSFET,凭借其80V耐压、74A电流能力和极低的导通阻抗,成为高效电源设计中的关键元件。其小型DFN封装也使得其在紧凑型设计中具有明显优势。无论是在电源管理、驱动技术还是其他高功率应用中,BSC072N08NS5都展现出色的能力,能够为设计者提供可靠和高效的解决方案。

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