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Infineon IRFP260NPBF
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRFP260NPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 400
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRFP260NPBF
- Electronic Component
- 1
- Package
- TO-247AC-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.536g
- Electronic Component
- 1
- Electronic Component
- BM0000281014
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 300W
- Electronic Component
- 400
- Voltage(Vdss)
- 200V
- Capacitor(Ciss)
- 4.057nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IRFP260NPBF N通道MOSFET
基本信息： IRFP260NPBF是一款高效、耐用的N通道金属氧化物场效应晶体管（MOSFET），广泛应用于电源管理、逆变器、高频开关等领域。其出色的性能使其成为电力电子设备和工业应用中不可或缺的元件。
主要参数：
- 漏源电压（Vdss）： 该MOSFET的最大漏源电压可达200V，使其能够处理高电压的应用，适用于电源转换器、直流电动机驱动等需要高电压的场合。
- 连续漏极电流（Id）： IRFP260NPBF在25°C的环境温度下能够连续承受50A的漏极电流，适用于高功率应用。
- 导通电阻（Rds On）： 在10V的栅源电压下，最大导通电阻为40毫欧（@ 28A），这意味着在工作过程中能显著降低功率损耗，提高整体效率。
- 栅源电压（Vgs）： 此MOSFET支持的最大栅源电压为±20V，确保在驱动时有足够的安全裕度。
- 栅极电荷（Qg）： 在10V的栅源电压下，最大栅极电荷为234nC，表明其开关速度相对较快，适应高频操作的需求。
热管理与功率耗散： IRFP260NPBF的最大功率耗散能力为300W（在结温Tc情况下），合适的散热设计可以确保其高效稳定运行。其宽广的工作温度范围为-55°C至175°C，使其适用于苛刻环境下的应用。
输入电容与开关特性： 在输入条件下，该MOSFET的最大输入电容（Ciss）为4057pF（@ 25V），这一特性在高频应用中对于降低开关损耗和提升系统响应速度至关重要。高输入电容使其在开关频率较高的应用中能够有效降低由于电容充电而带来的功耗。
应用领域： IRFP260NPBF广泛应用于工业电源、太阳能逆变器、电机控制、开关电源、DC-DC转换器以及其他需要高电压和高电流控制的电力电子电路。其出色的性能和耐用性，令其在各种复杂和苛刻的应用条件下表现出色。
封装形式： 该MOSFET采用TO-247AC封装，便于安装并能有效散热，适合通孔安装，符合工业标准，便于在各种电路中集成。
总结： IRFP260NPBF是一款性能卓越的N通道MOSFET，融合了高电流承载能力、低导通电阻和较好的开关特性，适用于多种电力电子应用。其温度范围和耐压性能使其在许多工程应用中展现了卓越的可靠性和稳定性，为工程师们提供了一个理想的解决方案。无论是在高频应用，还是在高功率设备中，IRFP260NPBF都能为现代电力电子系统提供出色的表现和可靠的操作环境。
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