WMSIC Electronic Components

Infineon BGS12P2L6E6327XTSA1

ModelBGS12P2L6E6327XTSA1
PackageXFDFN-6(0.7X1.1)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BGS12P2L6E6327XTSA1
Type
INFINEON
Minimum package
15000 圆盘

Technical parameters

IIP3
74dBm
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BGS12P2L6E6327XTSA1
Electronic Component
1
Package
XFDFN-6(0.7X1.1)
Electronic Component
0.51dB
Electronic Component
SPDT
Electronic Component
RFSwitch
Electronic Component
0g
Electronic Component
50
Electronic Component
27dB
Electronic Component
1
Electronic Component
BM0227677316
RFType
GSM,LTE,W-CDMA
Operating Temperature
40°C ~ 85°C(TA)

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BGS12P2L6E6327XTSA1 产品概述

一、概述

BGS12P2L6E6327XTSA1 是英飞凌(Infineon)推出的一款宽带射频开关,采用 SPDT 结构,面向 GSM、LTE、W‑CDMA 等移动通信和宽带射频前端应用。器件工作频率覆盖 50 MHz 至 6 GHz,典型测试频率为 5.925 GHz,系统阻抗为 50 Ω,适合现代多制式、多频段收发链路切换需求。

二、关键性能参数

  • 插入损耗(Insertion Loss):0.51 dB(典型值)——在高频链路中可将信号损耗降至最低,保持接收灵敏度和发射效率。
  • 隔离(Isolation):27 dB(典型值)——有助于抑制发送与接收通道之间的串扰,维持系统线性和信号完整性。
  • 输出三阶截点(IIP3):74 dBm——极高的线性指标,适用于多载波和高动态范围场景,降低互调干扰。
  • 频率范围:50 MHz ~ 6 GHz,覆盖蜂窝与多数无线标准频段。
  • 阻抗:50 Ω(系统级兼容)。
  • 工作电压:1.65 V ~ 3.4 V,便于与常见基带/射频控制电源兼容。
  • 工作温度:-40 °C ~ 85 °C(TA)。
  • 封装:XFDFN‑6 (0.7 × 1.1 mm),超小型布局,利于紧凑化 RF 模块设计。

三、结构与封装

器件为 SPDT 开关,三端 RF 管脚(COM、NO、NC)并配合逻辑控制引脚实现通道切换。XFDFN‑6 超小封装降低 PCB 面积占用,适合手机、便携式终端和小型基站等空间受限应用。针对小型封装建议在 PCB 设计中做好地平面和散热通道以保证性能稳定。

四、典型应用

  • 手机与便携式终端的天线切换与前端路由。
  • 小型基站、室分(DAS)与中继站的发射/接收切换。
  • 多模、多频段的 4G/5G 前端模块(作为开关阵列单元)。
  • 无线测试设备与射频测量系统中高速切换需求。
  • IoT 与 M2M 终端的低功耗射频路径管理。

五、设计与集成建议

  • 布局:RF 路径尽量短且直,RF 引脚附近布置多组过孔接地以降低回流电感并提高隔离。
  • 匹配:器件内部为 50 Ω 器件,通常无需外部匹配网络;若系统上存在 PCB 不连续或滤波器相连,建议在实验验证后微调匹配网络。
  • 电源与控制:提供稳定的 1.65 V–3.4 V 供电,电源端使用去耦电容抑制噪声;控制信号与 Vcc 具有良好电平兼容性可直接驱动。
  • 保护:为提高系统可靠性,建议在输入端增加合适的 ESD/浪涌保护,并关注功率承受能力与散热设计(大功率发射场景下)。
  • 测试:在 5.925 GHz 等关键工作点进行插损、隔离及线性度测试,验证符合系统级要求。

六、产品优势总结

该器件以极低的插入损耗、优秀的隔离性能和极高的 IIP3 提供出色的线性与信号完整性表现;超宽频带与小型化封装使其在多制式、多场景的射频前端设计中具有良好的通用性和集成性,适合追求高性能与体积受限的无线终端与基站应用。

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