WMSIC Electronic Components

Infineon IRLR7843TRPBF

Infineon IRLR7843TRPBF
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Product image

ModelIRLR7843TRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLR7843TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLR7843TRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.616g
Electronic Component
1
Electronic Component
BM0000282810
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
140W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：IRLR7843TRPBF MOSFET

概述： IRLR7843TRPBF 是一款高性能的 N 沟道金属氧化物半导体场效应晶体管（MOSFET），由知名半导体制造商英飞凌（Infineon）生产。该器件被广泛应用于电源管理、电机驱动和功率转换等领域，能够有效提高电路的效率和可靠性。

关键参数： 该 MOSFET 的重要性能参数包括：

  • 漏源电压 (Vdss): 30V
  • 连续漏极电流 (Id): 161A （在 25°C 下）
  • 漏源导通电阻 (Rds(on)): 3.3mΩ @ 15A, 10V
  • 栅源极阈值电压 (Vgs(th)): 2.3V @ 250µA
  • 最大功率耗散: 140W（在 25°C 下）
  • 工作温度范围: -55°C ~ 175°C

这些参数使得 IRLR7843TRPBF 在高电流和高功率应用中非常可靠，能够在苛刻的环境条件下工作而不影响性能。

MOSFET 特性与优势： IRLR7843TRPBF 采用 N 沟道结构，这种设计在实现高效率和快速开关方面具有显著优势。其低导通电阻（Rds(on)）使得它在导通时的功率损耗极小，能有效降低电源损耗，提高整体系统效率。此外，其高漏极电流能力（161A）使得该组件能够支持高功率的应用。

MOSFET 的栅源极阈值电压设定在 2.3V，这意味着它较低的驱动电压要求使得其能够适应多种控制电路。这种特性使得设计人员可以轻松集成该器件至现有的电路中，而无需进行重大修改。

封装与安装： IRLR7843TRPBF 采用 TO-252-3（DPAK）封装，这是一种表面贴装型封装，适合于自动化生产线的高速安装。DPAK 封装不仅提高了散热能力，确保了器件在高负载条件下的稳定性，同时其紧凑的设计也优化了电路板的空间使用。

应用场景： IRLR7843TRPBF 的广泛应用领域包括但不限于：

  • 电源转换器：由于其高效的导通控制和功率处理能力，常用于 DC-DC 转换器及开关电源。
  • 电机控制：在电机驱动电路中，其快速开关特性能够有效控制电机的启停及速度调节，大大提高了电机的性能和效率。
  • 驱动电路：在 LED 驱动器和其他负载控制电路中，非常适合用于调光和开关控制。

总结： 综上所述，IRLR7843TRPBF MOSFET 以其卓越的性能参数和可靠性，成为电源管理和功率控制应用中的理想选择。其领先的技术和出色的电气特性使之在各种高功率和高效应用中具有广泛的适用性。无论是用于工业设备，还是在商业产品中，IRLR7843TRPBF 都是推动电力电子技术进步的重要组件。设计人员可以充分信赖该产品的稳定性与高性能，为其项目带来可观的收益。

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