WMSIC Electronic Components

Infineon IRF7341TRPBF

Infineon IRF7341TRPBF
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Product image

ModelIRF7341TRPBF
PackageSO-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF7341TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF7341TRPBF
Electronic Component
1
Package
SO-8
Electronic Component
2 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.286g
Electronic Component
1
Electronic Component
BM0000286907
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2W
Electronic Component
Electronic Component
Electronic Component
4000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：IRF7341TRPBF

引言

IRF7341TRPBF 是英飞凌（Infineon）推出的一款高性能双 N 沟道场效应晶体管（MOSFET），专为低功耗、高效能应用而设计。它采用先进的制造技术，提供优越的电气特性和可靠性，适用于各种电子电路中的开关和放大应用。

基本规格

IRF7341TRPBF 的关键电气参数如下：

  • 漏源电压 (Vdss)：55V
  • 连续漏极电流 (Id)：4.7A（在 25°C 条件下）
  • 栅源极阈值电压 (Vgs(th))：1V @ 250µA
  • 漏源导通电阻 (RDS(on))：50mΩ @ 4.7A, 10V
  • 最大功率耗散：2W (在环境温度 Ta=25°C)
  • 工作温度范围：-55°C 至 150°C (TJ)
  • 封装类型：SO-8（0.154"，3.90mm 宽）

电气特性

IRF7341TRPBF 的显著特点是其低导通电阻和高漏源电流能力，使其在高电压和高电流的应用场合中极具竞争力。50mΩ 的导通电阻确保在通电时的能量损耗最小化，从而提升整体能效。其 Vgs(th) 为 1V，表示该 MOSFET 的开启电压非常低，非常适合逻辑电平应用，例如与微控制器或数字电路级联时。

工作性能

该器件在多种工作条件下都表现出良好的电气性能。漏源电流 Id 最大可达到 4.7A，适合在中等功率的应用中工作。其设计考虑到高频率工作所需的输入电容 (Ciss) 为 740pF @ 25V，确保在快速开关操作时保持良好的信号完整性。

应用场景

IRF7341TRPBF 被广泛应用于各种工业和消费类电子产品中，包括但不限于：

  • 开关电源
  • 电机驱动电路
  • LED 驱动器
  • 线性稳压器
  • DC-DC 转换器

其逻辑电平门特性使该 MOSFET 特别适合用于低电压控制电路，广泛适用于嵌入式系统中，如智能手机、微控制器、FPGA 和其他数字电路。

热管理与封装

IRF7341TRPBF 的最大功率耗散为 2W，结合其广泛的工作温度范围(-55°C 至 150°C)，在设计时可以使用户更好地进行热管理。SO-8 表面贴装型封装也使其在 PCB（印刷电路板）设计中更加灵活，适合高密度布局要求。

总结

综上所述，IRF7341TRPBF 是一款高效能、低功耗的双 N 沟道 MOSFET，搭载了一系列出色的电气特性和广泛的应用场景。无论是用于工业设备还是消费电子产品，该 MOSFET 的性能都能满足现代电子设计的要求。因此，IRF7341TRPBF 是提高系统效率、降低能耗的重要选择，助力工程师在电子产品设计中取得更高的成就。

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