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Infineon IRF100B201
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRF100B201
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRF100B201
- Electronic Component
- 1
- Package
- TO-220AB
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.64g
- Electronic Component
- 1
- Electronic Component
- BM0000285921
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 441W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IRF100B201 N通道MOSFET
基本信息
IRF100B201是由英飞凌（Infineon）生产的一款高性能N通道MOSFET，专为需要高电压和大电流应用的环境设计。该器件的最大漏源电压（Vdss）达到100V，能够处理高达192A的连续漏极电流，同时具有极低的导通电阻，确保了卓越的导电性能和热管理能力。
技术参数
- 漏源电压（Vdss）: 100V
- 连续漏极电流（Id）: 192A（在Tc下）
- 导通电阻: 在10V驱动电压下，115A电流时，最大导通电阻为4.2毫欧。
- 栅极阈值电压（Vgs(th)）: 最大值为4V（在250µA电流下）。
- 栅极电荷（Qg）: 最大值255nC（在10V驱动电压下）。
- 输入电容（Ciss）: 最大值为9500pF（在50V时）。
- 功率耗散: 最大功率耗散可达441W（在Tc条件下）。
- 工作温度范围: -55°C 至 175°C（TJ），适应极端工作环境。
- 安装类型: 通孔（Through-Hole）。
- 封装类型: TO-220AB，提供良好的散热性能和机械强度。
应用场景
IRF100B201被广泛应用于多个领域，包括但不限于以下应用：
- 电源管理：在开关电源和DC-DC变换器中，IRF100B201提供了优秀的开关特性和低压降，适用于高效能的电源解决方案。
- 电动汽车：由于其高电流承受能力和宽温度范围，非常适合于电动汽车（EV）和混合动力汽车（HEV）中的电动驱动系统。
- 工业设备：在工业自动化和控制系统中，IRF100B201可以作为高效的开关元件，实现可靠的电力传输和控制。
- 逆变器：在太阳能逆变器和其他可再生能源设备中，IRF100B201能够有效控制电能转换，提升整体效率。
性能优势
IRF100B201在高功率应用中表现出色，其低导通电阻和高电流容量使得能量损耗降到最低，同时能够在高负载条件下稳定工作。还具备较高的工作温度范围，使其适应各种恶劣环境。这些特点使得IRF100B201在高效能和高可靠性要求的电子电路设计中成为理想选择。
总结
综上所述，IRF100B201 N通道MOSFET是一款结合了卓越电气性能和广泛应用潜力的高功率器件。其设计足以应对当今市场上对高效率、低损耗和优质散热管理的要求，是现代电子技术中不可或缺的关键元件之一。无论是在电源转换、汽车电动驱动力，还是在其他工业应用中，IRF100B201都将发挥关键作用，提供可靠和高效的性能保证。
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