WMSIC Electronic Components

Infineon IRF7853TRPBF

ModelIRF7853TRPBF
PackageSO-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF7853TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF7853TRPBF
Electronic Component
1
Package
SO-8
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.286g
Electronic Component
1
Electronic Component
BM0000001106
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
4000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF7853TRPBF 产品概述

基本信息

IRF7853TRPBF 是一款符合市场需求的 N 通道 MOSFET,采用先进的金属氧化物半导体技术(MOSFET),广泛应用于各种电子设备和电源管理系统中。它的主要功能是作为开关器件,能在高效率和高性能的应用场合展现出卓越的导通性能和低导通损耗。该器件由知名的半导体制造商 Infineon(英飞凌)提供,适合多种工业应用。

关键参数

  • 漏源电压 (Vds): 该 MOSFET 的最大漏源电压为 100V,能够在高电压环境下安全工作,适合用于高电压变换器和功率转换电路。
  • 连续漏极电流 (Id): 在工作温度 25°C 时,IRF7853TRPBF 可承受最大 8.3A 的连续漏极电流。这一特性使其适合用于大电流的应用场景,例如开关电源、电机驱动以及控制电路等。
  • 导通电阻 (RDS(on)): 在 10V 的驱动电压下,最大导通电阻为 18 毫欧(@ 8.3A),这一低导通电阻在降低功率损耗方面表现出色,提高了系统的整体效率。
  • 栅极驱动电压 (Vgs): 和常规 MOSFET 一样,优良的栅极驱动电压特性,最大值为 ±20V,这意味着在较宽的栅驱动范围内可以稳定工作。
  • 栅极阈值电压 (Vgs(th)): 最大阈值电压为 4.9V,这使得其能够在较低的栅极电压下开始导通,提高了控制灵活性。
  • 功率耗散 (Pd): 最大功率耗散为 2.5W,适用于需要高效热管理的应用领域。
  • 工作温度范围 (TJ): 工作温度范围宽广,从 -55°C 到 150°C,确保了在极端环境下的可靠工作,符合工业和汽车等严酷环境的要求。
  • 封装类型: 采用 SO-8 表面贴装型封装,尺寸紧凑,非常有利于高密度装配,能够节省空间。

应用领域

由于其具有优异的电气性能,IRF7853TRPBF 广泛用于以下几个主要应用领域:

  1. 开关电源: 在电源转换器中,能够有效地控制电能转化,提高变换效率,降低能耗。
  2. 电机驱动: 用于控制直流和步进电机的开关元件,保证高效、可靠的运行。
  3. 功率管理系统: 作为负载开关、PWM 控制器等,能够实现有效的能量控制与分配。
  4. 便携式设备: 在需要节能和高效率的便携电子产品中,能够提升系统的续航能力和性能稳态。

总结

综上所述,IRF7853TRPBF N 通道 MOSFET 结合了高电压、高电流和低导通电阻等多种优质性能,成为现代电源管理与控制系统中不可或缺的组件。凭借 Infineon(英飞凌)的品牌背景及其卓越的技术支持,该产品在各类电子应用领域均展现出良好的可靠性和灵活性,是工程师和设计师们广泛推荐的选择。

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