WMSIC Electronic Components

Infineon IRFB3306PBF

ModelIRFB3306PBF
PackageTO-220AB
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFB3306PBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFB3306PBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.75g
Electronic Component
1
Electronic Component
BM0000287938
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
230W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRFB3306PBF N沟道MOSFET

一、基本信息

IRFB3306PBF是一款高性能的N沟道MOSFET,广泛应用于电源管理、电子开关和功率转换等多种场合。该器件的关键参数包括:漏源电压(Vdss)为60V,最大连续漏极电流(Id)为120A(在25°C环境下),其导通电阻(Rds On)在75A时可低至4.2mΩ,极低的导通损耗使其在各种应用中表现出色。

二、性能指标

  • 漏源电压 (Vdss):60V
  • 连续漏极电流 (Id):120A @ 25°C
  • 栅源极阈值电压 (Vgs(th)):4V @ 150µA
  • 漏源导通电阻 (Rds On):4.2mΩ @ 75A, 10V
  • 最大功率耗散:230W (Tc)
  • 工作温度范围:-55°C 至 175°C

该器件采用TO-220AB封装,适合通孔安装,可以便捷地集成到不同的电路板设计中。此外,其最大的栅极电压为±20V,保证了设备的安全工作范围。

三、技术特点

IRFB3306PBF使用金属氧化物半导体场效应晶体管(MOSFET)技术,通过电压栅极控制漏源极之间的电流流动。其特点包括:

  1. 高开关速度:由于其低导通电阻,这款MOSFET能够在较小的栅极电压下快速开启和关闭,适合高频率应用。
  2. 高效能:低导通电阻意味着在高电流运行中功率损耗极低,从而提高系统效率并降低热量生成。
  3. 宽温度范围:其工作温度范围广泛,从-55°C至175°C,适应各种恶劣环境,特别适合汽车、工业控制和航空航天领域。

四、应用领域

IRFB3306PBF被广泛应用于以下几个领域:

  1. 电源供应电路:用于高效DC-DC转换器和功率放大器中,能够处理大量电流并提供稳定的输出。
  2. 电动汽车:由于其高功率密度和散热性能,该MOSFET常用于电动汽车中,促进驱动电机和充电系统的高效运行。
  3. 工业自动化:在各类电子控制装置中,大电流的开关控制需求使其成为工业自动化系统的理想选择。
  4. 消费电子:如开关电源和LED驱动器,灵活性和功率效率使其在这一领域也占有一席之地。

五、设计与封装

IRFB3306PBF的TO-220AB封装是针对需要较高功率散热的应用设计的,有助于快速散发热量,保持稳定的工作温度。在电路设计中,考虑到其引脚排列,设计人员可以轻松进行布局和走线,以确保最佳的电气性能和热管理。

六、结论

IRFB3306PBF是一款具有优异性能和多种应用前景的高效N沟道MOSFET,凭借其在高电流、大电压下的低导通电阻及强大的功率处理能力,成为现代电力电子设计的重要组成部分。无论是在高效电源转换、汽车电子,还是工业控制系统中,这款MOSFET都能提供可靠的解决方案,助力提升设备性能与效率。

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