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Infineon BSC0504NSI
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSC0504NSI
- Type
- INFINEON
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSC0504NSI
- Electronic Component
- 1
- Package
- TDSON-8(5x6)
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.3g
- Electronic Component
- 1
- Electronic Component
- BM0227714226
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 30W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 960pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSC0504NSI 产品概述
一、概述
BSC0504NSI 是 Infineon（英飞凌）推出的一款高性能 N 沟道场效应管（MOSFET），针对低压、高电流切换应用优化。器件为单片 N 沟道结构，TDSON-8 (5x6) 小型封装，适合空间受限且需高效散热的电源与开关场景。
二、主要参数
- 漏源电压 Vdss：30 V
- 连续漏极电流 Id：64 A
- 导通电阻 RDS(on)：3.7 mΩ @ Vgs=4.5 V, 30 A
- 阈值电压 Vgs(th)：约 2 V
- 总栅极电荷 Qg：5.2 nC
- 输入电容 Ciss：960 pF @ 15 V
- 反向传输电容 Crss：29 pF @ 15 V
- 最大耗散功率 Pd：30 W（在参考散热条件下）
- 工作温度范围：-55 °C ～ +150 °C
- 数量/极性：1 个 N 沟道 MOSFET
三、关键特性与应用场景
- 低 RDS(on)（3.7 mΩ@4.5 V）使其在导通损耗上表现优秀，适合高效率同步整流、降压转换器、功率开关和负载开关等场合。
- 阈值约 2 V，且在 4.5 V 驱动下已能达到标称 RDS(on)，属于逻辑电平驱动适用器件，便于与低压驱动电平配合。
- 适用于电机驱动、DC-DC 转换、充电管理、电源路径控制与冷热插拔保护等需要大电流且对占位和散热有要求的设计。
四、驱动与开关建议
- 为达到标称导通性能，建议栅极驱动电压以 4.5 V 为目标（根据系统允许亦可评估更高驱动电压，但须参照器件额定 Vgs 极限）。
- 总栅极电荷 5.2 nC 与 Ciss 960 pF 表明需要适度驱动电流以获得快速切换，驱动器选型需兼顾开关速度与系统 EMI。
- 推荐在栅极串联小阻以抑制振铃并控制 dv/dt（典型范围从几个Ω到几十Ω，根据实际测试调整）。
五、封装与布局注意
- TDSON-8 (5x6) 封装具有热流散能力，建议在 PCB 设计中使用大面积铜箔与焊盘连接散热垫，并采用多层接地/电源平面以降低温升。
- 布局时应优化开关回路，缩短高电流回路长度，减小寄生电感，靠近器件放置去耦电容与续流路径。
六、可靠性与使用提示
- 额定耗散 30 W 与连续电流 64 A 需要合理的热设计与散热条件，实际可承受功率受 PCB 散热与环境温度影响较大。
- 注意器件在高温环境下的热极限，长期在高温下工作需关注热循环与应力。
- 在实际应用中，应做开关损耗、热仿真与可靠性测试，以确定最佳驱动方案与保护策略（如短路保护、温度保护与软启动等）。
总结：BSC0504NSI 以其低导通电阻、适中的栅极电荷和紧凑封装，适合需高效率与高电流密度的低压功率应用。合理的驱动与散热设计可发挥其最佳性能。
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