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Infineon IPA65R650CE
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IPA65R650CE
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 500 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IPA65R650CE
- Electronic Component
- 1
- Package
- TO-220F
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.815g
- Electronic Component
- 1
- Electronic Component
- BM0259730061
- Operating Temperature
- 40℃~+150℃
- Power Dissipation(Pd)
- 86W
- Electronic Component
- Electronic Component
- Electronic Component
- 500
- Voltage(Vdss)
- 700V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IPA65R650CE（N沟道场效应管）
1. 产品简介
IPA65R650CE是由英飞凌（Infineon）公司制造的一款高性能N沟道场效应管（MOSFET），其具有650V的漏源电压（Vdss）、7A的连续漏极电流（Id）及较低的漏源导通电阻（Rds(on)），适用于多种高压电源管理和开关应用。该器件是PG-TO220-3封装，便于散热和安装，适合在各种电子设备中使用。
2. 关键参数
漏源电压（Vdss）: IPA65R650CE可承受最高650V的漏源电压，适用于高压电源转换器及电动机驱动等应用场景。
连续漏极电流（Id）: 在25°C环境温度下，该MOSFET可以承载高达7A的连续漏极电流，保证在常规工作条件下的可靠性和稳定性。
栅源极阈值电压: 该器件的栅源极阈值电压为3.5V（在210μA的栅流下测得），确保了对控制信号的良好响应。
漏源导通电阻（Rds(on)）: 在2.1A电流和10V栅源电压下，该MOSFET的漏源导通电阻为650mΩ，充分降低了在工作过程中产生的功耗，提高了系统能效。
最大功率耗散: 在25°C环境下，该器件的最大功率耗散为28W，适合在负载变化和高温环境下工作。
3. 应用领域
IPA65R650CE主要用于高压开关电源、电动机驱动、照明控制、逆变器、光伏逆变器等应用。在这些应用中，它能够有效地控制电流，降低能耗，同时保持系统的可靠运行。
4. 性能特性
高效能: 该MOSFET的低漏源导通电阻和高功率耗散能力，使其在开关设备中的应用更加高效，有助于提高系统的整体能耗控制。
稳定性与可靠性: 英飞凌作为行业内的知名品牌，其产品在可靠性、耐用性方面都经过严格测试，符合多种工业标准，极大增强了应用产品的市场竞争力。
良好的散热能力: PG-TO220-3封装的设计提供了良好的散热性能，尤其在高功率应用中，可以有效降低器件的工作温度，从而延长使用寿命并提高系统的可靠性。
5. 使用注意事项
在使用IPA65R650CE时，需要注意的事项包括：
确保在规定的工作电流和电压范围内操作，以避免器件损坏。
对于栅极驱动的设计，应保证必要的栅源电压，以确保MOSFET能够彻底导通并达到最低的导通电阻。
在高频应用中，需要考虑开关损耗，以及器件的开关速度响应，以优化其在实际电路中的表现。
6. 结论
IPA65R650CE是一款高性能的N沟道场效应管，适用于高压开关电源、驱动电路以及其他需要高电压、高效率的应用场景。通过其出色的电气特性与英飞凌的品牌保障，IPA65R650CE无疑是设计师在选择MOSFET时的重要考虑对象。在不断发展的电子应用领域中，IPA65R650CE凭借其卓越的性能与适应性，将为产品的创新与能效提升提供强有力的支持。
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