WMSIC Electronic Components

Infineon IRLR8726TRPBF

ModelIRLR8726TRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLR8726TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLR8726TRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.481g
Electronic Component
1
Electronic Component
BM0227544640
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
75W
Electronic Component
Electronic Component
Electronic Component
2000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRLR8726TRPBF 产品概述

产品名称:IRLR8726TRPBF
品牌:Infineon(英飞凌)
类型:N沟道MOSFET
封装:TO-252-3(D-Pak)

一、基本规格

IRLR8726TRPBF是一款高性能、表面贴装的N沟道MOSFET,特别设计用于高功率和高电流应用场合。其主要参数如下:

  • 漏源电压(Vdss):最高可承受30V的漏源电压,适合大多数低至中压应用。
  • 连续漏极电流(Id):在25°C环境下,最大连续漏极电流可达86A,确保其在高负载条件下依然能够稳定工作。
  • 栅源极阈值电压(Vgs(th)):阈值电压为2.35V @ 50µA,表明该MOSFET在较低的栅电压下便能导通,便于与多种驱动电路兼容。
  • 漏源导通电阻(Rds(on)):在10V驱动下,导通电阻为5.8mΩ @ 25A,表明在工作时具有极低的能量损耗和热耗散,有助于提高系统效率。
  • 最高功率耗散:最大功率耗散为75W(在Tc条件下),适合多个应用场景。
  • 工作温度范围:广泛的工作温度范围为-55°C至175°C,确保在极端环境下正常运行。

二、设计与应用

IRLR8726TRPBF MOSFET设计先进,其制造技术采用了高效的金属氧化物半导体(MOS)技术,提供了优异的开关性能和热稳定性。它适用于多种领域,包括但不限于:

  1. 电源管理:广泛用于高效功率转换设备及电源模块,可以有效降低能量损耗,提升整体系统效率。
  2. 电机驱动:适合驱动直流电机及无刷电机控制的应用,能够承受高电流需求且响应迅速。
  3. 开关控制:在各种开关电路中,能够实现快速开关和稳定的工作性能,可用于DC-DC转换器和其他需要频繁开关的电路中。
  4. 汽车应用:可用于电动汽车和混合动力汽车中的高压电力控制系统,帮助提高输电效率和优化功耗管理。

三、技术优势

IRLR8726TRPBF提供了一系列技术优势:

  • 低导通电阻:其低的Rds(on)特性减少了通流损耗,提高了工作效率,适合长期处于高负载状态的应用场景。
  • 高电流承载能力:其高Id能力使其能够适应要求较高的负载,增加系统的可靠性。
  • 宽广的工作温度范围:优良的温度适应能力,使产品能够在各种苛刻条件下工作,符合现代工业和汽车应用的需求。
  • 良好的开关特性:快速的栅极响应和低栅极电荷(Qg)能够提高开关频率,降低驱动损耗,适用于高频应用。

四、总结

IRLR8726TRPBF是一款高效的N沟道MOSFET,因其优秀的电气特性和广泛的应用域,受到市场的广泛欢迎。无论是在消费电子、工业电源还是汽车电子领域,该MOSFET均展现了良好的性能和可靠性,是各种电力和控制方案的理想选择。无论您在寻找什么样的高功率解决方案,IRLR8726TRPBF都能为您提供强大的支持。

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