WMSIC Electronic Components

Infineon IRFL4315TRPBF

Infineon IRFL4315TRPBF
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Product image

ModelIRFL4315TRPBF
PackageSOT-223
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFL4315TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFL4315TRPBF
Electronic Component
1
Package
SOT-223
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.302g
Electronic Component
1
Electronic Component
BM0058411240
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.8W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
150V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：IRFL4315TRPBF

1. 简介： IRFL4315TRPBF 是一款高性能 N 通道 MOSFET，由知名半导体制造企业英飞凌（Infineon）生产。这款 MOSFET 采用 SOT-223 封装，能够在高达 150V 的漏源电压（Vdss）下运行，适合于各种需要高电压和中等电流的应用场合。它具有优异的导通性能和低开关损耗，广泛应用于电源管理、马达驱动和其他电力电子设备中。

2. 技术参数：

  • FET 类型： N 通道
  • 技术： MOSFET（金属氧化物半导体场效应管）
  • 漏源电压（Vdss）： 150V
  • 25°C 连续漏极电流 (Id)： 2.6A
  • 最大驱动电压： 10V (用于最小 Rds On)
  • 导通电阻（Rds On）： 最大值为 185 毫欧 @ 1.6A，10V
  • 阈值电压 (Vgs(th))： 最大值为 5V @ 250µA
  • 栅极电荷 (Qg)： 最大值为 19nC @ 10V
  • 栅源电压最大值： ±30V
  • 输入电容 (Ciss)： 最大值为 420pF @ 25V
  • 功率耗散： 最大值为 2.8W
  • 工作温度范围： -55°C ~ 150°C
  • 封装类型： SOT-223

3. 应用场合： IRFL4315TRPBF 的多样化性能使其适用于多种应用场合，包括：

  • 开关电源： 其高电压容忍度和低导通电阻使其在开关电源设计中表现出色，可以有效降低开关损耗，提升转换效率。
  • 电机驱动： 在电机驱动应用中，它能够承受瞬态电压变化，使得电机启动和停止时的性能更加可靠。
  • 电池管理： 在电子设备和电动汽车的电池管理系统中，该 MOSFET 可用于控制充电和放电过程，确保系统的稳定与安全。
  • 功率放大器： 由于其高效率和热管理能力，它也可用于无线电频率放大器中，有助于提升信号强度和回收效率。

4. 优势和特点： IRFL4315TRPBF 的主要优势包括：

  • 高效能： 具有极低的导通电阻（Rds On），进而削弱了功率损耗，提高了系统的能效。
  • 宽工作温度范围： 从 -55°C 到 150°C 的工作温度范围使其适用于各种苛刻的环境。
  • 小型封装： SOT-223 的封装设计有助于节省电路板空间，适合于体积紧凑的电子设备。
  • 良好的散热性能： 功率耗散能力高达 2.8W，使得在高负载情况下能够有效散热，延长器件的使用寿命。

5. 结论： IRFL4315TRPBF 是一款性能卓越的 N 通道 MOSFET，凭借其优异的电压和电流特性、低导通电阻及广泛的应用范围，可以满足现代电子产品对功率管理的需求。这款 MOSFET 不仅在电源管理和马达控制中显示出卓越的性能，还能在高温和高压环境下保持工作稳定性。因此，对于设计工程师和电子产品开发者而言，IRFL4315TRPBF 是推动高效能和高可靠性设计的不二选择。

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