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Infineon BSC007N04LS6
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSC007N04LS6
- Type
- INFINEON
- Minimum package
- 5000 未知
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSC007N04LS6
- Electronic Component
- 1
- Package
- TDSON-8-EP(5x6)
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.16g
- Electronic Component
- 1
- Electronic Component
- BM0231141880
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 188W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 40V
- Capacitor(Ciss)
- 8.4nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSC007N04LS6 产品概述
一、概述
BSC007N04LS6 是 Infineon（英飞凌）推出的一款高性能 N 沟道功率 MOSFET，额定漏源电压 Vdss=40V，连续漏极电流 Id=100A，适用于中低压大电流的开关和功率管理场合。封装为 TDSON-8-EP（5x6），具有良好的热性能与布局友好性，工作温度范围宽（-55℃ ~ +175℃）。
二、关键电气参数
- Vdss（漏源电压）：40 V
- Id（连续漏极电流）：100 A
- RDS(on)（导通电阻）：0.7 mΩ @ Vgs=10V, Id=50A（低导通电阻，导通损耗小）
- Pd（耗散功率）：188 W（在良好散热条件下可承受较大功率）
- Vgs(th)（阈值电压）：2.3 V
- Qg（总栅极电荷）：94 nC（相对较大，驱动电流要求高）
- Ciss（输入电容）：8.4 nF @ 20 V
- Crss（反向传输电容，Miller）：89 pF @ 20 V
三、性能亮点与影响
BSC007N04LS6 的超低 RDS(on) 使其在高电流条件下导通损耗极低，适合同步整流、降压转换器和功率开关应用。较高的 Pd 指出在合适的散热设计下能承受持续高功率。较大的 Qg 和 Ciss 表明在高速开关时需要足够的驱动能力，否则开关损耗和切换时间会增加；同时 Crss 影响 Miller 效应，需注意在高 dV/dt 场合的误触发和电磁干扰。
四、封装与热管理
TDSON-8-EP（5x6）带外露大焊盘（EP），有利于将结温通过 PCB 大面积铜箔和过孔散出。建议布局时：
- 在器件底部和焊盘下方布置多排热过孔连接内外层散热铜箔；
- 引脚和功率走线尽量加宽、短化以降低寄生电阻和电感；
- 考虑在热设计中按照实际 PCB 散热能力对 Pd 进行降额使用。
五、典型应用与使用建议
适用于：
- 同步降压（buck）转换器的开关或同步整流管；
- 电机驱动、负载开关、大电流点式开关电源；
- 半桥/全桥拓扑中的低压侧或高侧（配合合适驱动器）。
使用建议：
- 栅极驱动电压推荐 10 V 以获得最低 RDS(on)，若使用较低 Vgs，应评估导通损耗；
- 对于高速开关应用，应配置足够电流的驱动器、合理的栅阻和必要的 RC/TVS 抑制网络；
- 注意器件的 SOA 与热循环，应在系统级进行温升验证。
BSC007N04LS6 以其低导通阻和优良的散热封装，适合要求高效率、大电流的电源与电机驱动场景，但需在驱动与 PCB 热设计上给予足够重视以发挥其最佳性能。
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