WMSIC Electronic Components

Infineon FM24W256-GTR FM24W256

ModelFM24W256-GTR
PackageSOIC-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon FM24W256-GTR
Type
INFINEON
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
FM24W256-GTR
Electronic Component
1
Package
SOIC-8
Electronic Component
FRAM
Electronic Component
0.304g
Electronic Component
1
Electronic Component
BM0258757840
Electronic Component
256Kbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~5.5V
Operating Current
400uA
Current
15uA
Interface Type
I2C
Electronic Component
100000000000000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FM24W256-GTR 产品概述

一、主要特性

FM24W256-GTR 是英飞凌(Infineon)FM24W 系列的 256Kbit (32K × 8) 串行 F-RAM,工作电压范围宽(2.7V–5.5V),在 3 μs 写入响应下即可完成单字节写操作。器件采用 SOIC-8 封装,提供高耐用性与快速非易失性数据存储,适合对写入次数与响应时间有严格要求的嵌入式系统。

二、接口与电气性能

该器件通过标准 I2C 总线访问,支持最高时钟频率 1 MHz(Fast/High-speed 模式需参考总线规范与主控能力)。典型工作电流约 400 μA,待机电流仅 15 μA,适合电池供电与低功耗设计。器件逻辑电平随 VCC(2.7V–5.5V)变化,无需额外电平转换(在与不同电压域通信时仍需注意)。

三、可靠性与寿命

F-RAM 的突出优势是极高的擦写耐久性与长期数据保存能力。该型号的擦写寿命可达 1×10^14 次量级,数据保持期理论值可达约 151 年(在典型条件下)。由于不依赖高压擦写或静默周期,F-RAM 在频繁写入场景中能显著优于闪存或 EEPROM。

四、封装与机械特性

FM24W256-GTR 提供 SOIC-8 封装,适合主流 PCB 装配与自动化贴装。封装尺寸与引脚排列符合常见标准,便于替换同类 SPI/I2C 存储器。具体引脚功能与封装图请参考官方数据手册以完成布局与焊盘设计。

五、典型应用场景

  • 数据记录仪器:高频写入的传感器数据缓存与日志保存。
  • 工业控制:参数配置、校准数据与故障记录。
  • 计量与医疗设备:需长期保存关键数据且写入频繁的场景。
  • 电池供电与低功耗设备:得益于低待机电流与快速写入特性。

六、设计注意事项

  1. I2C 总线设计中应按需配置上拉电阻,且上拉值需兼顾总线容量与通信速率。
  2. 电源去耦:建议在 VCC 与 GND 之间靠近引脚放置 0.1 μF 陶瓷电容以抑制瞬态噪声。
  3. 温度与可靠性:器件工作温度范围为 -40℃ 至 +85℃,在极端环境下需评估系统级热管理与长期漂移。
  4. 系统容错:尽管 F-RAM 擦写耐久极高,但建议在关键数据结构上采用校验或冗余设计以提高整体可靠性。

如需进一步的引脚定义、I2C 命令字、时序图或参考电路,请告知,我可基于官方规格书为您整理关键参数与示例电路。

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