WMSIC Electronic Components

Infineon IRFB38N20DPBF

Infineon IRFB38N20DPBF
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Product image

ModelIRFB38N20DPBF
PackageTO-220AB
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFB38N20DPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFB38N20DPBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.748g
Electronic Component
1
Electronic Component
BM0000281358
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
300W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFB38N20DPBF 产品概述

一、基本信息

IRFB38N20DPBF 是一款高性能的 N 通道 MOSFET，广泛用于高功率开关和放大应用。根据其规格参数，这款器件能够在高达 200V 的漏极源极电压下稳定工作，并且在适当的散热条件下，可以支持连续漏极电流达到 43A。凭借其低导通电阻和出色的温度特性，IRFB38N20DPBF 特别适合于电源转换、电机驱动、LED 驱动等多种应用场景。

二、关键特性

  1. 高压能力: IRFB38N20DPBF 的最大漏源电压（Vdss）为 200V，使其适用于高压电源和电机控制应用。

  2. 高电流承载能力: 在 25°C 环境温度下，其连续漏极电流（Id）可达 43A，这使得器件在高功率负载下表现优异。

  3. 低导通电阻: 在 10V 的栅极驱动电压情况下，IRFB38N20DPBF 的最大导通电阻（Rds On）仅为 54 毫欧，在 26A 的电流下表现尤为突出。这一特性有效降低了开关损耗与热量产生，提升了整体效率。

  4. 良好的温度稳定性：该器件的工作温度范围广泛，从 -55°C 到 175°C 的高温环境中均能稳定工作，因此适用于极端温度环境下的应用。

  5. 输入电容特性: 输入电容（Ciss）最大值为 2900pF（@25V），此特性有助于在高频率应用中保持信号度，确保快速开关操作。

  6. 极低的栅极电荷: IRFB38N20DPBF 的栅极电荷（Qg）最大值为 91nC，这使其具备快速开关能力，有效降低了驱动能耗。

  7. 可靠的封装设计: 采用 TO-220AB 封装形式，使得器件易于散热，同时其通孔安装类型适配广泛的 PCB 设计，便于集成与布线。

三、应用领域

IRFB38N20DPBF 的特点使其广泛应用于以下领域：

  1. 开关电源: 能够在高效率的开关电源设计中，作为主要的功率开关元件，提供良好的电能转化效率和热管理。

  2. 电机控制: 在 DC 电机驱动和无刷电机控制中，凭借其高电流能力和迅速响应特点，能够有效实现精确的速度与转矩控制。

  3. LED 驱动: 在 LED 照明系统中，使用 IRFB38N20DPBF 可提高整体工作效率，减少能量浪费。

  4. 电池管理系统: 适用于电池充放电管理，能够高效控制能量流向及保持电池性能。

四、总结

IRFB38N20DPBF 是一款卓越的 N 通道 MOSFET，适用于各类高功率、高效率的电子设计。其高电压、高电流的特性及优秀的导通电阻表现，使得该器件在电源转换和电机控制等领域具有重要的市场竞争力。在选择适合的功率开关时，IRFB38N20DPBF 显然是一个值得考虑的理想选择。

如需获取进一步的技术支持或产品详细信息，客户可直接联系英飞凌的售后服务。我希望以上信息能为您在选择合适的电子元器件时提供价值。如有任何问题，请随时询问。

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