WMSIC Electronic Components

Infineon IRLR9343TRPBF

Infineon IRLR9343TRPBF
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Product image

ModelIRLR9343TRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLR9343TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLR9343TRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
5.49g
Electronic Component
1
Electronic Component
BM0091265540
Operating Temperature
40℃~+175℃
Power Dissipation(Pd)
79W
Electronic Component
Electronic Component
Electronic Component
2000
Voltage(Vdss)
55V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：IRLR9343TRPBF P通道MOSFET

概述

IRLR9343TRPBF是一款高性能、P通道金属氧化物场效应管（MOSFET），由知名电子元件制造商英飞凌（Infineon）生产。该器件设计用于在电力电子和电源管理应用中提供高效的电流控制和开关性能，适合各种工业以及消费电子产品。IRLR9343TRPBF的出色规格可以满足多种严苛应用需求，尤其在高温环境和高负载条件下表现优越。

基本参数与性能

该MOSFET的关键参数包括：

  • 漏源电压（Vdss）：55V，标志着其能够承受的最大电压，适合许多低到中压应用。
  • 连续漏极电流（Id）：20A（Tc），此参数表示在设定的晃动温度下，器件能够安全承受的最大持续电流。
  • 导通电阻（Rds On）：在不同的条件下，IRLR9343TRPBF的导通电阻表现出色，最大值为105毫欧（@10V，3.4A），这大大减小了在开关状态下的功耗和发热，从而提升了系统效率。
  • 阈值电压（Vgs(th)）：最大为1V @ 250µA，确保在较低的栅极驱动电压下便可实现导通，有助于提高电路的整体响应速度。
  • 栅极电荷（Qg）：最大值为47nC @ 10V，这对于高频应用至关重要，因为它直接影响到开关速度和效率。
  • 输入电容（Ciss）：660pF @ 50V，显示出在输入信号变化时，器件的电容响应特性，有助于在快速开关时降低延迟。
  • 功率耗散：长达79W（Tc），能够处理高功率负载，适用于大多数中型功率应用。
  • 工作温度范围：-40°C至175°C，支持在极端环境条件下的可靠运行，非常适合工业和汽车领域。

封装与安装

IRLR9343TRPBF采用了TO-252（D-PAK）封装，此种封装类型使其适合表面贴装安装（SMT），具有良好的散热性能和布局灵活性。此外，其双引线和散热片设计，有助于降低器件工作时的热阻，使得系统整体运行更加稳定。

应用场景

IRLR9343TRPBF广泛应用在电源管理、开关电源（SMPS）、电动机驱动、LED驱动和电池管理系统中。特别是在汽车电子、工业控制、消费电子等领域，它的高效能可直接提升设备的能量利用率，降低系统的热负荷和故障率。同时，其优秀的动态特性和抗压能力使得在高频率和频繁开关的条件下，无需担心性能下降。

总结

IRLR9343TRPBF作为一款高效率的P通道MOSFET，其出色的技术参数和灵活的应用场景，令其成为各种功率电路设计中的理想选择。随着电源管理和电动机控制技术的不断发展，对高效半导体器件的需求日益增加，IRLR9343TRPBF无疑能够满足市场对高性能电子元器件的要求，并帮助工程师实现更高效、更可靠的设计方案。

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