WMSIC Electronic Components

Infineon BSC093N15NS5

ModelBSC093N15NS5
PackageTDSON-8(5x6)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BSC093N15NS5
Type
INFINEON
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC093N15NS5
Electronic Component
1
Package
TDSON-8(5x6)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.15g
Electronic Component
1
Electronic Component
BM69420255
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
139W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
150V
Capacitor(Ciss)
3.23nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSC093N15NS5 产品概述

一、产品描述

BSC093N15NS5是一款由英飞凌(Infineon)出品的高性能N沟道MOSFET,具有139W的功率额定值和150V的漏极-源极最大电压(V_DS)。该器件的额定电流可达到87A,非常适合用于高电流及高电压的应用场景,是电力转换、开关电源及其他电力电子设备的理想选择。BSC093N15NS5采用PG-TDSON-8封装,面积为5x6 mm,提供了良好的散热性能和提升电路密度的能力。

二、主要特性

  1. 高电压和电流额定值: BSC093N15NS5的150V漏极-源极电压和87A额定电流使其可以处理高功率应用,适用于各类变换器和电源管理电路。

  2. 低导通电阻: 此MOSFET的导通电阻(R_DS(on))非常低,这可大幅度减少在开关工作中产生的热量,同时提高整体效率。

  3. 快速开关特性: BSC093N15NS5具备更快的开关速度,使其特别适合高频应用,有助于减少开关损耗,提高系统的总体效率。

  4. 优良的热性能: PG-TDSON-8封装提供优越的热管理,通过大的散热面提供有效的散热方案,确保MOSFET在高功率应用中的稳定运行。

  5. 高可靠性: 英飞凌作为全球知名的半导体制造商,BSC093N15NS5在生产过程中经过严格的质量检测,具有良好的长期可靠性。

三、应用领域

由于其优异的特性,BSC093N15NS5广泛应用于以下领域:

  1. 开关电源: 在各类DC-DC变换器中,MOSFET作为开关元件,能够高效地释放和转换电能。BSC093N15NS5的高电流承载能力和低导通电阻使其表现出色。

  2. 电动车辆: 在电动汽车的电源管理系统中,BSC093N15NS5可用于电池管理、驱动电机、充电设备等关键模块,满足高效能和长寿命的需求。

  3. 逆变器: 在太阳能逆变器和工业逆变器中,MOSFET用于电能转换,BSC093N15NS5能够有效应对高电压和高频率操作。

  4. 电机驱动: 在各种电机驱动应用中,BSC093N15NS5提供快速的开关性能,能够对电流进行精确控制,从而实现高效且高响应速度的电机操作。

四、技术规格

  • 漏极-源极最大电压(V_DS): 150V
  • 连续漏极电流(I_D): 87A
  • 导通电阻(R_DS(on)): 具体值需参见数据手册
  • 功耗(P_D): 139W
  • 封装类型: PG-TDSON-8(5x6 mm)

五、总结

BSC093N15NS5是英飞凌公司推出的一款高性能N沟道MOSFET,凭借其优越的电气特性和高可靠性,成为高电压、大电流应用的理想选择。通过将其集成于各类电力电子设计中,工程师能够实现更高的效率、更长的使用寿命以及更小的设计体积,满足现代电子产品对性能的苛刻要求。因此,BSC093N15NS5在电力转换与电源管理领域具有广泛的应用前景,能够有效推动相关应用技术的发展。

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