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Infineon IPD65R400CE
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon IPD65R400CE
- Type
- INFINEON
- Minimum package
- 2500
Technical parameters
- Electronic Component
- INFINEON
- Electronic Component
- IPD65R400CE
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.513g
- Electronic Component
- 1
- Electronic Component
- BM0228685649
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 118W
- Electronic Component
- 2500
- Voltage(Vdss)
- 700V
- Capacitor(Ciss)
- 710pF
- Gate (Qg)
- 39nC@10V
- Resistor(RDS(on))
- 400mΩ@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IPD65R400CE 产品概述
一、产品简介
IPD65R400CE 为英飞凌 (Infineon) 生产的一款高耐压 N 沟道功率 MOSFET，适合中高电压功率开关场合。该器件采用 TO-252（DPAK）封装，单片器件，具有良好的开关性能与热稳定性，额定功耗与电流适合开关电源、电机驱动与功率变换器等应用。
二、主要参数
- 极性：N 沟道
- 漏源电压 Vdss：650V（型号指示）
- 连续漏极电流 Id：15.1A
- 导通电阻 RDS(on)：400mΩ @ Vgs=10V（测试电流约 3.24A）
- 最大耗散功率 Pd：118W（窗口依环境与散热条件）
- 栅阈电压 Vgs(th)：约 3.5V
- 总栅极电荷 Qg：39nC @ Vgs=10V
- 输入电容 Ciss：710pF @ 100V
- 反向传输电容 Crss：140pF @ 100V
- 工作温度范围：-55℃ ~ +150℃
- 封装：TO-252（DPAK）
三、性能特点
- 高耐压：650V 级别适合电网侧或高压总线的功率开关。
- 中等导通损耗：RDS(on) 对应中等导通电阻，适合中小功率应用或作为并联使用的单元。
- 开关能量与栅电荷适中：Qg=39nC 在 10V 栅压下体现了器件在开关频率与驱动功率之间的折衷，适用于中频率（几十 kHz）开关应用。
- 体积与散热平衡：TO-252 封装便于模块化组装，配合合理 PCB 散热可获得较好的功率承受能力。
四、典型应用
- 开关电源（PFC、半桥/全桥转换器）
- 逆变器与电机驱动（中小功率）
- 工业电源与电源模块保护开关
- 浪涌吸收或高压开关阵列（并联使用）
五、封装与散热建议
- TO-252 需将底部散热垫与大铜箔、散热通孔相连，保证热阻最小化。
- 在 PCB 布局上，尽量减小源引脚回流环路与栅极回路的寄生电感，栅极到驱动器之间使用合适的阻尼（例如 5–20Ω）抑制振铃。
- 对于连续大电流工作，应进行热仿真并根据环境温度对额定电流进行降额处理。
六、使用注意事项
- 驱动电压建议以 10V 为优选工作点，避免长时间施加过高栅压。
- 在高 dv/dt 场合注意 Crss 带来的耦合效应，必要时加 RC 吸收或缓冲电路。
- 并联使用时确保良好电流均衡与匹配，安置合适的电阻或电流共享措施。
- 关注 SOA（安全工作区）与热耗散限制，设计时考虑峰值电流与散热余量。
总体而言，IPD65R400CE 是一款面向中高压、要求可靠散热与开关性能的 MOSFET，适用于多种工业与电源转换场景。根据具体应用，请结合器件数据手册进行详细热、开关与可靠性校核。
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