WMSIC Electronic Components

Infineon IRLR3110ZTRPBF

ModelIRLR3110ZTRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRLR3110ZTRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRLR3110ZTRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.492g
Electronic Component
1
Electronic Component
BM0257642386
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
140W
Electronic Component
Electronic Component
Electronic Component
2000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRLR3110ZTRPBF 产品概述

基本信息

IRLR3110ZTRPBF是一款高性能的N沟道MOSFET,采用TO-252-3(DPAK)封装,特别设计用于要求高功率处理的应用场合。作为英飞凌(Infineon)出品的一款重要产品,IRLR3110ZTRPBF具备出色的电气特性和工作能力,能够在广泛的工作条件下稳定运行。

关键规格

  • FET类型: N通道MOSFET
  • 漏源电压(Vdss): 100V
  • 连续漏极电流(Id): 42A(在集成电路温度Tc下)
  • 导通电阻(Rds(on): 最大14毫欧在38A、10V条件下
  • 驱动电压(Vgs): 最佳工作条件下可使用4.5V和10V
  • 阈值电压(Vgs(th)): 最大2.5V(在100µA电流条件下)
  • 栅极电荷(Qg): 最大48nC(在4.5V下)
  • 输入电容(Ciss): 最大3980pF(在25V下)
  • 最大功率耗散: 140W(Tc条件下)
  • 工作温度范围: -55°C至175°C(集成电路温度TJ)
  • 封装类型: 表面贴装型,D-Pak

应用场景

IRLR3110ZTRPBF被广泛应用于许多高功率和高频率的电子设备中。其优越的电气特性使其在以下领域表现尤为出色:

  1. 开关电源: 由于其高度的效率和低导通电阻,适合用于电源转化器和供电模块,优化功率损耗并提高转换效率。

  2. 电机驱动: 在电机控制和驱动侧,IRLR3110ZTRPBF能够提供快速开关性能和高电流承载能力,适合在各种工业和家用电机应用中使用。

  3. 汽车电子: 其宽广的工作温度范围和高可靠性使其特别适合应用在汽车电子设备上,包括电池管理系统和电力转化器。

  4. 消费电子: 适合用于各类消费电子产品,如计算机电源、LED驱动电路等,能够提供高效的开关控制。

特性优势

  1. 高效能: IRLR3110ZTRPBF的低导通电阻使其在高电流应用中表现出色,有效降低热量产生,提升效率。

  2. 宽工作温度: 广泛的工作温度范围保证了其能够在严苛环境中稳定运行,增加了产品的应用适应性。

  3. 高功率处理能力: 最大功率耗散达到140W,适应于高负载电路,确保在高功率状态下仍能保持稳定。

  4. 便捷的表面贴装: TO-252-3封装设计使其易于焊接和集成到各种电路板上,节省了空间并提高了生产效率。

结论

IRLR3110ZTRPBF是一款兼具高性能和高可靠性的N沟道MOSFET,凭借其卓越的电气参数和优良的温度适应性,成为众多应用的理想选择。无论是在开关电源、电机驱动、汽车电子还是消费电子产品中,IRLR3110ZTRPBF都能够提供稳定、安全的电源管理解决方案。作为英飞凌品牌的一员,IRLR3110ZTRPBF代表了高品质和高效率的电子元器件选择,对于设计人员和工程师来说,是在高功率应用中不可或缺的重要器件。

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