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Infineon IKW75N65EH5
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IKW75N65EH5
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 240 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IKW75N65EH5
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- IGBT / Module
- Electronic Component
- 6.13g
- Electronic Component
- 1
- Electronic Component
- BM0148654046
- Operating Temperature
- 40℃~+175℃
- Power Dissipation(Pd)
- 395W
- (Eon)
- 2.3mJ
- (Eoff)
- 900uJ
- Electronic Component
- Electronic Component
- Electronic Component
- 240
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IKW75N65EH5 产品概述
概述
IKW75N65EH5 是由英飞凌（Infineon）公司制造的一款高性能绝缘栅双极晶体管（IGBT），其封装形式为TO-247。这款IGBT管被广泛应用于各种功率电子设备中，如变频器、直流变换器、逆变器、电机驱动等。IKW75N65EH5在高电压、高电流和高效率的应用场合中表现出色，成为工业及消费电子领域中理想的选择。
主要特性
- 电压等级: IKW75N65EH5 的额定电压为650V，适合高电压应用，能够有效处理工业设备中的浪涌电压。
- 电流容量: 具有优异的电流承载能力，最大连续放电电流为75A（在适当的散热条件下），适合于高负载要求的应用。
- 低开关损耗: 由于采用了最新的技术，该IGBT具有低开关损耗的优点，在高频应用中能够提高效率，降低发热，有助于改善整体系统性能。
- 优秀的热性能: TO-247封装设计使得IKW75N65EH5具备良好的散热特性，能够有效地管理热量，延长器件的使用寿命。
- 高增益带宽: IKW75N65EH5在高频开关时，能够提供较高的增益带宽，确保在高速工作下仍能保持良好的开关特性。
应用领域
IKW75N65EH5因其高效能和稳定性被广泛应用于多个领域，包括但不限于：
变频器: 在工业变频器中，IKW75N65EH5负责控制三相电机的速度和扭矩，提供精确的转矩控制，提升系统能效。
电动汽车: 在电动驱动系统中，用于电机驱动和功率转换，确保电能的高效转换与分配。
可再生能源: 例如，光伏逆变器中的应用，IKW75N65EH5可用于将直流电转换成可用于家庭或工业电网的交流电，支持可再生能源的发展。
电源供应: 在开关电源、亮化设备中，IKW75N65EH5的性能使得电源转换高效且稳定。
设计考虑
在使用IKW75N65EH5时，设计工程师需要考虑以下因素：
散热: 由于器件的功率负载较高，设计时必须确保有适当的散热机制，以防止过热造成的性能下降或损坏。
驱动电路: 选用适当的驱动电路以匹配IGBT的特性，确保其快速可靠地切换，减少开关损耗。
电源条件: 根据应用场合的电源特性，适当选择IGBT的操作频率和工作模式，以实现最佳性能。
总结
作为英飞凌推出的IGBT系列中的一个重要产品，IKW75N65EH5凭借其优异的电气特性和广泛的应用适应性，成为了现代电力电子设备中不可或缺的基础元件之一。无论是在工业自动化、可再生能源还是电动汽车领域，IKW75N65EH5都能为用户提供高效、可靠的解决方案，推动着相关技术的发展与进步。
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