WMSIC Electronic Components

Infineon FM25V02A-GTR FM25V02A

ModelFM25V02A-GTR
PackageSOIC-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon FM25V02A-GTR
Type
INFINEON
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
FM25V02A-GTR
Electronic Component
1
Package
SOIC-8
Electronic Component
FRAM
Electronic Component
0.312g
Electronic Component
1
Features
Electronic Component
Electronic Component
BM0257628057
Electronic Component
256Kbit
Operating Temperature
40℃~+85℃
Operating Voltage
2V~3.6V
Operating Current
2.5mA
Current
150uA
Interface Type
SPI

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FM25V02A-GTR 产品概述

一、产品简介

FM25V02A-GTR 是 Infineon(英飞凌)系列的 256Kbit(32K x 8)SPI 接口 FRAM(铁电随机存取存储器),封装为 SOIC-8。该器件支持最高 40 MHz 的 SPI 时钟,工作电压范围 2.0 V ~ 3.6 V,结合 FRAM 的本质特性,实现了低延时、超高擦写寿命和长时间数据保持,是对频繁写入、高可靠性有严格要求系统的理想选择。

二、主要参数

  • 存储容量:256 Kbit(32K × 8)
  • 接口类型:SPI,最高时钟频率 fc = 40 MHz
  • 工作电压:2.0 V ~ 3.6 V
  • 工作电流:典型 2.5 mA(工作模式)
  • 待机电流:150 μA
  • 睡眠模式电流(Izz):8 μA
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 擦写寿命:1×10^14 次(100000000000000 次)
  • 数据保持(TDR):约 151 年
  • 封装:SOIC-8(8-SOIC)
  • 功能特性:工作状态指示(状态寄存器中的操作/忙状态指示)

三、核心优势

  • 极高的擦写寿命:1e14 次写入周期,适合需要持续、高频写操作的场景(例如数据记录、故障日志、计量)。
  • 快速随机写入:FRAM 可直接按字节/多字节写入,无需擦除周期或页边界限制,写入延迟低,实时性好。
  • 低功耗特性:工作电流仅为毫安级,待机和睡眠模式下电流很小(150 μA / 8 μA),适合电池供电或低功耗设备。
  • 高可靠性、长数据保持:TDR 约 151 年,在断电或长时间存储场合下数据可靠性高。
  • 简单兼容的 SPI 接口:标准 SPI 协议兼容,支持高速读写(最高 40 MHz),便于与 MCU、FPGA 等主控集成。

四、典型应用

  • 数据记录与日志(工业数据记录器、事件日志、黑匣子)
  • 智能电表与计量设备(频繁写入、长期保存)
  • 可穿戴与移动设备(低功耗、断电数据保护)
  • 工业控制与监控(配置存储、故障追溯)
  • 汽车电子(需要宽温度范围和高可靠性的非易失性存储)

五、设计与使用建议

  • 电源旁路:在 VCC 与 GND 之间放置 0.1 μF 陶瓷旁路电容,靠近器件引脚布置,抑制瞬态噪声。
  • CS / HOLD / WP 管脚:建议在系统中使用上拉/下拉以保证空闲状态稳定,防止总线误触发;在长线或高速传输时可在信号线上串入小阻值(几十Ω)以抑制反射。
  • 电平匹配:器件工作在 2.0 V~3.6 V 范围内,如与 5 V 系统通信需使用电平移位器或选择兼容接口电平。
  • SPI 时序与多器件:在多从机系统中,确保 CS(片选)切换清晰,避免片选重叠导致总线冲突;遵循器件时序规范以保证数据完整性。
  • 写入策略:利用 FRAM 的随机写特性,按需小量更新可显著简化固件设计,避免额外的擦除/页管理逻辑。

六、可靠性与寿命评估

FM25V02A-GTR 的擦写寿命和数据保持性能远超传统闪存,适用于需要极高写入次数和长时间数据保存的应用。其宽工作电压和商业级温度范围(-40 ℃ ~ +85 ℃)确保在多种工作环境下稳定运行。设计时应考虑电源纹波、ESD 防护以及 PCB 布局对长期可靠性的影响,必要时进行加速寿命和环境可靠性验证。

总结:FM25V02A-GTR 以 FRAM 的本质优势结合高速 SPI 接口和低功耗特性,为需要高耐久写入、快速响应和高数据可靠性的系统提供了高性价比的非易失性存储解决方案。

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