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Infineon IQE013N04LM6ATMA1
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IQE013N04LM6ATMA1
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IQE013N04LM6ATMA1
- Electronic Component
- 1
- Package
- TSON-8-4
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.45g
- Electronic Component
- 1
- Electronic Component
- BM0264382902
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 107W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IQE013N04LM6ATMA1 产品概述
一、产品简介
IQE013N04LM6ATMA1 为英飞凌（Infineon）出品的一款 N 沟道功率 MOSFET，适用于中低压大电流开关场合。器件额定漏—源电压为 40V，结合极低的导通电阻与较高的允许耗散功率，适合要求高效率与小封装体积的电源与功率管理应用。
二、关键电气参数
- 漏—源电压 Vdss：40 V
- 连续漏极电流 Id：205 A（器件级标称值，实际使用依热设计与散热条件）
- 导通电阻 RDS(on)：1.35 mΩ @ Vgs = 10 V
- 阈值电压 Vgs(th)：≈2 V
- 总栅极电荷 Qg：55 nC @ 10 V（门极驱动开关损耗参考）
- 输入电容 Ciss：3.9 nF；输出电容 Coss：1.2 nF；反向传输电容 Crss：40 pF
- 耗散功率 Pd：107 W（热设计与封装相关）
- 结温工作范围：-55 ℃ ～ +175 ℃
三、封装与热管理
封装为 TSON-8-4 / TSON-8-EP，裸露散热焊盘（尺寸约 3.3×3.3 mm），适合在 PCB 上通过大面积焊盘与多层散热铜层实现热流导出。虽然器件允许较高结温，实际高电流应用须通过合理的 PCB 散热设计、热焊盘和必要的对流/强制风冷来降低结温并保证长期可靠性。
四、开关与驱动注意
Qg = 55 nC 表明器件栅电容较大，需要门极驱动器提供足够的电流以实现快速开关，避免过长开关过渡时间造成额外开关损耗。Ciss/Coss/Crss 的组合决定了器件的开关行为：较大的 Ciss 表示驱动能量需求，较小的 Crss 有利于减小米勒效应，提升开关稳定性。选型时应平衡导通损耗与开关损耗，并注意门极电阻与布局以控制振铃与电磁干扰。
五、典型应用场景
- 同步降压转换器（高电流输出通道）
- 服务器与电信电源的开关级与负载开关
- 汽车 12V/24V 辅助电源与电机驱动（需按车规要求验证）
- 高效率功率级、热敏感空间有限的便携电源方案
六、选型与使用建议
- 在高电流场合优先保证 PCB 的热扩散能力，采用多层铜和大焊盘。
- 为了保证低导通损耗，推荐驱动栅极至 10 V；若驱动电压受限，需重新评估 RDS(on) 的实际表现。
- 在快速开关应用中，选择合适的门极驱动器与门极电阻以兼顾开关损耗与 EMI。
- 评估实际连续电流时，应基于系统的热阻与工作温度进行计算，不要仅依赖器件标称 Id。
总体而言，IQE013N04LM6ATMA1 以其超低 RDS(on)、高电流能力与紧凑 TSON-EP 封装，适合追求高效率与高功率密度的电源与功率控制设计。
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