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Infineon SPA20N60C3
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon SPA20N60C3
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 500 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- SPA20N60C3
- Electronic Component
- 1
- Package
- TO-220FP
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.945g
- Electronic Component
- 1
- Electronic Component
- BM0000283608
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 208W
- Electronic Component
- Electronic Component
- Electronic Component
- 500
- Voltage(Vdss)
- 650V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SPA20N60C3 产品概述
基本信息
SPA20N60C3 是一款由英飞凌（Infineon）生产的 N 沟道场效应管（MOSFET），其标称的漏源电压 (Vdss) 高达 650V，适合用于高压应用。产品的连续漏极电流 (Id) 在 25°C 时可达到 20.7A，这使得它在许多电力电子设备中具有广泛的应用潜力。SPA20N60C3 采用 PG-TO220-3 封装，便于散热与安装，使其能够承受高功率的工作环境。
关键参数
- 漏源电压 (Vdss): 650V
- 连续漏极电流 (Id): 20.7A @ 25°C
- 栅源极阈值电压: 3.9V @ 1mA
- 漏源导通电阻 (Rds(on)): 190mΩ @ 13.1A, 10V
- 最大功率耗散: 34.5W (环境温度 Ta = 25°C)
- 类型: N 沟道
- 封装: PG-TO220-3
应用场景
SPA20N60C3 可广泛应用于各种电力电子设备，比如开关电源（SMPS）、电机驱动器、逆变器、功率放大器等。其高耐压能力使其特别适合于变频器和其它高电压系统，比如光伏逆变器和电动汽车的电池管理系统。
在电源转换应用中，该 MOSFET 的低导通电阻使得其在导通状态下损耗低，有助于提高效率。由于其较大的功率耗散能力，SPA20N60C3 也适合于高功率转换器和大功率电机的控制电路。
性能优势
- 高耐压能力: 650V 的漏源电压使其可用于高电压电源应用，充分满足现代电力电子对组件的要求。
- 良好的导通特性: 190mΩ 的导通电阻在高电流工作时能够有效降低 I²R 损耗，提升系统效率。
- 适应性强: 适合多种工作温度的应用，表现出的良好热管理性能，其最大功率耗散为 34.5W，确保在极端条件下仍能可靠工作。
- 高转换速度: MOSFET 的栅极驱动电流小，开关速度快，对于快速开关的需求如 PWM 控制非常理想。
设计考虑
在设计使用 SPA20N60C3 的系统时，需要考虑栅极电阻、驱动电压和工作频率等因素，以确保MOSFET 在所需的开关频率下高效且稳定地工作。此外，适当的散热措施是必不可少的，特别是在高负载条件下，以确保组件长时间可靠运行。
结论
总体而言，SPA20N60C3 MOSFET 以其显著的性能参数和广泛的应用范围，成为电力电子工程师的理想选择。无论是在工业电源转换、可再生能源管理还是电动汽车驱动等领域，其卓越的性能和可靠性使得它在现代电子设计中占有一席之地。通过合理的设计与应用，这款 MOSFET 的潜力可以得到充分发挥，助力各种革新技术的实现。
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