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Infineon IRS25752LTRPBF
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRS25752LTRPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRS25752LTRPBF
- Electronic Component
- 1
- Package
- SOT-23-6
- Electronic Component
- (UVP)
- Electronic Component
- Gate Driver IC
- Electronic Component
- 0.064g
- Electronic Component
- 1
- Electronic Component
- BM0265987709
- Operating Temperature
- 55℃~+150℃
- Operating Voltage
- 10V~18V
- Load Type
- MOSFET
- Driver
- Electronic Component
- Current(IOH)
- 160mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRS25752LTRPBF 产品概述
一、产品简介
IRS25752LTRPBF 是英飞凌（Infineon）出品的一款单通道高边 MOSFET 门极驱动器，封装为 SOT-23-6。该器件专为驱动高边功率 MOSFET 设计，适用于10V~18V 的工作电源范围，提供快速的开关响应与可靠的欠压保护（UVP），适合汽车电子、工业电源及电机驱动等场景。
二、主要电气性能
- 驱动配置：高边单通道（single transistor, high-side）
- 灌电流 (IOL)：240 mA（下拉能力）
- 拉电流 (IOH)：160 mA（上拉能力）
- 工作电压范围：10 V ~ 18 V
- 上升时间 (tr)：约 85 ns；下降时间 (tf)：约 40 ns
- 传播延迟：tpLH ≈ 140 ns，tpHL ≈ 215 ns
- 静态电流 (Iq)：约 100 µA（低待机功耗）
- 工作结温：-55 ℃ ~ +150 ℃（Tj）
三、特色与保护
IRS25752LTRPBF 集成欠压保护（UVP），在供电电压低于安全阈值时自动禁止输出，防止 MOSFET 未完全导通导致的损坏或异常发热。低静态电流特性有利于节能与长时间待机应用。
四、应用建议
- 布局：驱动脚到 MOSFET 门极的走线应尽量短，减小寄生电感；驱动电源引脚须靠近器件放置去耦电容（建议使用低 ESR 陶瓷电容）。
- 门极阻值：根据 MOSFET 的栅电容与系统对开关损耗/振铃的权衡，建议在 10Ω–100Ω 范围内选取门极电阻。
- 散热：SOT-23-6 封装尺寸小，注意器件附近热源布局与四周铜箔散热，避免长期大电流下结温超限。
五、典型应用场景
汽车负载开关、高边电源开关、电机驱动前端、DC-DC 转换器高边开关、功率管理模块等场合，尤其适合需要紧凑封装与可靠欠压保护的设计。
六、封装与选型
封装：SOT-23-6，利于空间受限的应用。选型时请参考英飞凌官方数据手册获取完整引脚定义、绝对最大额定值与典型应用电路，以保证电气与热特性满足系统要求。
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