WMSIC Electronic Components

Infineon IRFR24N15DTRPBF

ModelIRFR24N15DTRPBF
PackageDPAK(TO-252AA)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFR24N15DTRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFR24N15DTRPBF
Electronic Component
1
Package
DPAK(TO-252AA)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.4g
Electronic Component
1
Electronic Component
BM0000081006
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
140W
Electronic Component
Electronic Component
Electronic Component
2000
Voltage(Vdss)
150V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRFR24N15DTRPBF N通道MOSFET

引言

在现代电子设计中,选择合适的功率开关器件至关重要,尤其是在高压和高电流应用场合。IRFR24N15DTRPBF是一款由知名品牌英飞凌(Infineon)生产的N通道MOSFET,具有出色的电气性能和广泛的工作温度范围。本产品适用于各种应用场合,包括电源管理、DC-DC转换、马达驱动等,是功率电子领域的一项理想选择。

规格参数

IRFR24N15DTRPBF MOSFET具备以下核心参数:

  • FET类型: N通道
  • 技术: 金属氧化物场效应管(MOSFET)
  • 漏源电压(Vdss): 150V,能够在高电压环境下稳定工作
  • 连续漏极电流(Id): 24A,适合大电流需求的应用
  • 驱动电压: 10V下,实现最小的导通电阻(Rds On),保证高效率的运行
  • 导通电阻: 在14A电流和10V驱动下,最大导通电阻仅为95毫欧,降低了功耗和热量产生
  • 门极阈值电压(Vgs(th)): 最大值5V@250µA,适应多种电路设计需要
  • 栅极电荷(Qg): 在10V驱动下,最大值为45nC,降低了驱动开关频率时的功耗
  • 输入电容(Ciss): 890pF@25V,提供较好的频率响应
  • 功率耗散(最大值): 140W,适应高功率负载
  • 工作温度范围: -55°C至175°C,适合严酷环境下的工作
  • 安装类型: 表面贴装型,简化PCB设计和生产过程
  • 封装类型: D-Pak (TO-252-3),提供良好的热性能和可靠性

应用领域

IRFR24N15DTRPBF因其卓越的性能而适用于众多应用,包括:

  1. 电源管理系统: 适用于开关电源、逆变器及其他电源产品中的功率开关。
  2. DC-DC转换器: 在DC-DC转换过程中作为高效率的开关元件,以减少能量损耗。
  3. 电动马达驱动: 在马达控制电路中,作为驱动开关,能有效提供电源和控制功能。
  4. 高温环境应用: 由于其广泛的工作温度范围,该MOSFET可在极端温度条件下稳定工作,适合航空航天、汽车以及工业控制等高温应用。

优势特点

  1. 高效率:其低导通电阻和高温特性使得IRFR24N15DTRPBF在高频率和高负载条件下表现出色,减少了能量损耗,提升了系统的整体效率。
  2. 良好的热性能:D-Pak封装提供优越的散热能力,降低在大电流条件下工作时的温升,延长器件和系统的使用寿命。
  3. 宽广的入阈电压范围和低栅极电荷:使其对驱动电路的要求相对较低,简化了设计流程。

总结

IRFR24N15DTRPBF N通道MOSFET是性能卓越的功率开关解决方案。凭借其150V的高漏源电压、24A的连续漏极电流和多种应用的适应能力,它在现代电子设计中扮演着重要角色。无论是电源管理、DC-DC转换还是电动马达驱动,IRFR24N15DTRPBF都能提供高效、可靠的性能,是功率电子领域不可或缺的重要组件。

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