WMSIC Electronic Components

Infineon IRFR5505TRPBF

Infineon IRFR5505TRPBF
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Product image

ModelIRFR5505TRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFR5505TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFR5505TRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.733g
Electronic Component
1
Electronic Component
BM0000286930
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
57W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFR5505TRPBF 产品概述

IRFR5505TRPBF 是一款高性能 P 沟道 MOSFET，采用 D-Pak 封装，特别设计用于高压和高电流应用。这款电子元器件的关键参数使其在多个领域中表现出色，包括电源管理、马达驱动和开关电源等。以下将详细介绍其主要参数、应用场景及优势。

主要参数

  • 漏源电压（Vdss）: 55V。该电压值为器件在工作中的最大承受电压。
  • 连续漏极电流（Id）: 18A（在 25°C 环境温度下）。这确保了 MOSFET 在高负载条件下的可靠性。
  • 栅源极阈值电压（Vgs(th)）: 4V @ 250μA。此参数决定了器件开启的电压，指示在此电压下 MOSFET 开始导电。
  • 漏源导通电阻（Rds(on)）: 110mΩ @ 9.6A, 10V。低导通电阻大幅降低了在工作过程中的能量损耗，提升了效率。
  • 最大功率耗散: 57W（在 Tc=25°C 时）。这一能力使得设备能在较高功率负载下稳定运行。
  • 工作温度范围: -55°C 至 150°C。宽广的温度范围适合各种环境条件，保证了在恶劣工作环境下的可靠性。
  • 封装类型: TO-252-3 (D-Pak)。这一表面贴装型封装使得安装更加便利，并在热管理方面表现良好。
  • 厂家: Infineon（英飞凌），其广泛应用于工业、汽车及消费类电子产品中，保证了产品的质量和性能。

应用场景

IRFR5505TRPBF 主要应用于以下领域：

  1. 电源管理: 在开关电源、直流-直流转换器及不间断电源（UPS）中，能提供高效的电源转换能力。

  2. 马达控制: 在电动机驱动应用中，能够有效控制电流，确保马达平稳运行，提升整体系统效率。

  3. 电动汽车及混合动力汽车: 在电动汽车的动力系统中，IRFR5505TRPBF 可用于电池管理和功率转换，提升电动汽车的续航能力和效率。

  4. 消费电子产品: 例如在计算机电源适配器、LED 驱动及其他消费类电子产品的应用场景中，应对各种负载变化，确保稳定供电。

产品优势

  • 高效能: 具有较低的导通电阻，有助于在高功率应用中显著降低热损耗，提升系统的能源效率。

  • 宽泛的工作范围: 适用的温度范围和高耐压使其在不同环境中安全稳定运行。

  • 可靠性: 作为知名品牌 Infineon 的产品，IRFR5505TRPBF 在工业标准下经过严格测试，具有良好的长期稳定性和可靠性。

  • 便于安装: D-Pak 封装技术便于自动化贴装，同时在散热性能上也具有一定的优势。

结论

IRFR5505TRPBF 是一款高效、可靠的 P 沟道 MOSFET，凭借其独特的电气特性，广泛适用于电源管理、马达控制和其他高功率应用。无论是在消费电子还是工业设备领域，这款 MOSFET 都能为设计师提供出色的性能与灵活性。在选择合适的 MOSFET 时，IRFR5505TRPBF 无疑是一种值得信赖的选择。

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