WMSIC Electronic Components

Infineon BSC035N04LSG

ModelBSC035N04LSG
PackagePG-TDSON-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon BSC035N04LSG
Type
INFINEON
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC035N04LSG
Electronic Component
1
Package
PG-TDSON-8
Type
N
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0000279961
Electronic Component
Electronic Component
Electronic Component
5000
Resistor
3.5mΩ @ 50A,10V
Voltage
2V @ 36uA
Voltage(Vdss)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSC035N04LSG 产品概述

一、概述

BSC035N04LSG 是一款高性能的 N 沟道金属氧化物半导体场效应晶体管(MOSFET),由德国知名半导体公司英飞凌(Infineon)生产。该器件具有出色的电气特性和优异的热性能,非常适合用于各种高效能的开关电源、 DC-DC 转换器、马达驱动器及其他要求高效率和低导通损耗的应用环境。

二、基本参数

  • 漏源电压(Vdss): 40V
    BSC035N04LSG 的最大漏极源极电压为 40V,意味着在该电压范围内器件能够稳定工作,能够承受较高的输入信号和负载电流。

  • 连续漏极电流(Id): 21A @ 25°C
    该器件在 25°C 环境温度下能够提供最大连续漏极电流 21A,适应高负载应用。

  • 栅源极阈值电压: 2V @ 36µA
    该 MOSFET 的栅源阈值电压为 2V,使其能够在相对较低的栅电压下被驱动,降低了驱动电路功耗。

  • 漏源导通电阻: 3.5mΩ @ 50A, 10V
    BSC035N04LSG 的导通电阻低至 3.5mΩ,意味着在较高电流下损耗极小,从而提高了系统的整体效率,降低发热。

  • 最大功率耗散: 2.5W @ Ta=25°C
    该器件在正常温度下的功率消耗限制为 2.5W,这为电路设计提供了有效的热管理数据。

  • 类型: N 沟道
    N 沟道 MOSFET 通常具有更良好的导电性能和开关特性,相对于 P 沟道设备具有更低的导通电阻和更快的开关速度。

三、封装与尺寸

BSC035N04LSG 采用 PG-TDSON-8 封装,具有小尺寸与良好的散热性能。此封装设计便于与其他元器件实现紧密搭配,非常适合现代电子设备的小型化与集成化趋势。

四、应用场景

  1. 开关电源(SMPS): BSC035N04LSG 非常适用于各种开关电源设计,如 AC-DC 电源转换器和 DC-DC 升降压转化器。其出色的导通电阻特性能够提高电源转换效率,降低损耗,从而实现更高的电源性能。

  2. 马达驱动: 在电动机控制应用中,该 MOSFET 可以作为开关控制元件。例如在无刷直流电机(BLDC)驱动电路中,有助于提高马达的运行效率和响应速度。

  3. 电池管理系统(BMS): 由于其低导通损耗及高可靠性,BSC035N04LSG 也适用于多种电池充放电管理系统,在电流回路的控制中发挥重要作用。

  4. 高频切换应用: 此 MOSFET 的快速开关特性使其在高频物理环境下应用也十分广泛,适合于开关频率大于 100kHz 的要求。

五、总结

BSC035N04LSG 是一款集高效率、低功耗与优越散热性能于一体的 N 沟道 MOSFET,适用于多种现代电子设备和应用场景。无论是在开关电源、马达驱动,还是电池管理等领域,它都能以其卓越的性能满足设计工程师对节能和高效能的需求。选择 BSC035N04LSG,您将拥有更高效、更可靠的电子系统解决方案。

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