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Infineon BSC012N06NS
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSC012N06NS
- Type
- INFINEON
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSC012N06NS
- Electronic Component
- 1
- Package
- TDSON8
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.39g
- Electronic Component
- 1
- Electronic Component
- BM0257701011
- Operating Temperature
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 11nF
- Gate (Qg)
- 115nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSC012N06NS 功能与特性概述
一、产品简介
BSC012N06NS 是英飞凌（Infineon）推出的一款高性能 N 沟道功率 MOSFET，封装为 TSON-8-EP（6×5 mm）。器件面向需要高电流、低导通损耗及紧凑封装的开关电源和功率管理应用，适合同步整流、降压转换器以及功率开关场合。
二、主要电气参数
- 类型：N 沟道 MOSFET，数量：1 个
- 漏源电压 Vdss：60 V
- 连续漏极电流 Id：100 A
- 导通电阻 RDS(on)：1.2 mΩ @ VGS=10 V, ID=50 A
- 阈值电压 VGS(th)：3.3 V（典型）
- 总栅电荷 Qg：115 nC @ VGS=10 V
- 输入电容 Ciss：11 nF @ 30 V
- 反向传输电容 Crss：120 pF @ 30 V
- 工作结温范围：-55 ℃ ~ +175 ℃
三、关键特性与优势
- 极低的 RDS(on) 在高电流条件下能显著降低导通损耗，提升效率；
- 60 V 的耐压等级兼顾了多种工业及汽车级供电场景；
- 结温最高可达 175 ℃，利于在受限散热条件下保持可靠性；
- 紧凑 TSON-8-EP 封装便于高密度 PCB 布局并提供良好导热路径。
四、驱动与开关考虑
- 器件栅极电荷较大（Qg = 115 nC），要求门极驱动器具备较高瞬态电流能力以实现快速开关，避免由于慢上升/下降造成的高开关损耗；
- 推荐 VGS=10 V 驱动以达到标称 RDS(on)，3.3 V 阈值仅表示导通起始电压，不宜作为完全导通驱动电平；
- 建议在栅极串联适当阻值以控制振铃并限制驱动瞬态电流，同时根据布局加上旁路电容以抑制尖峰。
五、封装与散热建议
- TSON-8-EP 带外挂焊盘（exposed pad），应将裸露焊盘牢固焊接至 PCB 大面积铜箔并辅以过孔通热至多层内层散热平面；
- 在高功率工况下，保持源极回流路径短且宽，尽量避免细长走线以降低寄生电阻/电感。
六、典型应用场景
- 同步整流降压转换器（DC-DC）；
- 服务器与通信电源前端开关；
- 电机驱动的低压段功率开关；
- 需高效率、高电流的功率管理模块。
七、选型与使用注意
- 若电路以低电压逻辑（如 3.3 V）直接驱动，请确认在目标电流下的导通损耗是否接受，必要时选用驱动升压到 10–12 V；
- 在高频开关应用中，应评估开关损耗与栅极能量投入的折衷；
- 设计时关注 PCB 散热能力与热阻预算，确保器件在允许结温内工作以保证长期可靠性。
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