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Infineon IRFZ48NPBF
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRFZ48NPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRFZ48NPBF
- Electronic Component
- 1
- Package
- TO-220AB
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.75g
- Electronic Component
- 1
- Electronic Component
- BM0265529422
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 130W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 55V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述: IRFZ48NPBF
1. 产品简介
IRFZ48NPBF是一款高性能的N通道MOSFET，专为高效能应用而设计，具备强大的电流承载能力和良好的导通特性。该场效应管具有55V的漏源电压（Vdss）和64A的连续漏极电流（Id），使其适用于各种需要高电流和高电压的电子电路。该器件广泛应用于电源管理、DC-DC转换器、电机驱动和其他要求高功率密度的应用场合。
2. 关键规格
- FET类型: N通道
- 技术: MOSFET（金属氧化物半导体场效应管）
- 漏源电压（Vdss）: 55V
- 连续漏极电流（Id）: 64A（在25°C时的等效工作温度）
- 导通电阻（Rds(On)）: 最大值为14毫欧（@32A，Vgs = 10V），这使得电流流动时的能量损耗降到最低，从而提高了电路的整体效率。
- 栅极驱动电压: 最小驱动电压为10V，能够确保在开启状态下获得最佳的导通特性。
- 阈值电压（Vgs(th)）: 最大值为4V（@250µA），确保在合理的控制电压下可实现可靠的开关操作。
- 栅极电荷（Qg）: 最大值为81nC（@10V），支持快速开关，提高了开关速率和效率。
3. 功率管理能力
该MOSFET的功率耗散能力非常优秀，最大功率耗散为130W（温度调节条件下），使其可以承受较高的热负荷而不易过热，从而延长产品的使用寿命。广泛的工作温度范围（-55°C至175°C）确保IRFZ48NPBF在极端环境下的可靠运行，适用于航空航天、军事及工业自动化等高要求的应用领域。
4. 封装和安装
IRFZ48NPBF采用TO-220AB封装，通孔安装设计使其在多种PCB设计中易于集成。这种封装提供了优良的散热性能，确保在高功率应用中能够有效地管理热量。
5. 应用场景
由于其卓越的性能参数，IRFZ48NPBF适用于以下几种主要应用场景：
- 电源管理: 在电源转换和管理系统中，作为开关元件，提供高效率的电流控制。
- 电机驱动: 应用于步进电机和直流电机的驱动，控制电机的启停和速度调节。
- 高频开关电源: 在开关电源模块中使用，提升系统转换效率，降低能量损失。
- 逆变器和UPS系统: 适用于逆变器应用，能够高效转换直流电源至交流电源。
- 工业自动化设备: 在自动化控制和监控设备中作为驱动元件，提高系统的整个工作效率。
6. 结论
总的来说，IRFZ48NPBF凭借其显著的电气性能、宽广的工作温度范围以及优良的封装设计，成为高电流和高电压场合的理想选择。其卓越的导通特性和低能量损耗，使其在现代电子设计中拥有广泛应用前景。如果您需要一个稳定、可靠并且具备优质性能的N通道MOSFET，IRFZ48NPBF无疑是值得考虑的解决方案。
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