WMSIC Electronic Components

Infineon IRF7476TRPBF

ModelIRF7476TRPBF
PackageSO-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 21+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF7476TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF7476TRPBF
Electronic Component
1
Package
SO-8
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.167g
Electronic Component
1
Electronic Component
BM0000737565
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
4000
Voltage(Vdss)
12V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF7476TRPBF 产品概述

基本信息 IRF7476TRPBF 是由英飞凌科技(Infineon Technologies)生产的一款高性能N沟道场效应管(MOSFET),属于HEXFET®系列。该器件采用表面贴装(SMD)封装,具体封装类型为SO-8(8引脚小型封装),适合用于空间受限的电路设计。该器件已停产,但由于其卓越的电气性能和广泛的应用场景,依然吸引了许多工程师的关注。

主要参数 IRF7476TRPBF的主要电气参数包括:

  • 连续漏极电流 (Id):15A(在25°C环境温度下)
  • 工作温度范围:-55°C至150°C,适合在极端环境条件下使用
  • 漏源电压 (Vdss):12V,以确保在多种应用中的安全性和稳定性
  • 导通电阻:最大8毫欧(在15A,4.5V条件下)保证低功耗损耗和高效率
  • 驱动电压 (Vgs):2.8V至4.5V,极大提高了其驱动灵活性与兼容性

这些参数表明,IRF7476TRPBF适用于各种需要低电压大电流开关或放大器的应用场合,例如电源管理、马达驱动和开关模式电源(SMPS)等。

电气性能 IRF7476TRPBF MOSFET在工作过程中的表现优异,其栅极电流(Qg)在驱动电压为4.5V时,最大值为40nC,显示出良好的开关响应速度。此外,输入电容(Ciss)为2550pF,意味着在高频应用中其开关损耗较低,能够提升整体电路效率。

栅极阈值电压(Vgs(th))的最大值为1.9V,能够支持低电压控制信号操作,适合微控制器或数字电路直接驱动。相应地,最大栅源电压(Vgs)为±12V,增加了设备的安全性和抗干扰能力。

散热与功率管理 在功率处理方面,IRF7476TRPBF的最大功耗为2.5W,这使得其在设计时可以考虑简化散热设计。由于其优异的导电性能和相对较低的导通电阻,应用此MOSFET可有效降低热耗散以及提升散热效率。

应用场景 IRF7476TRPBF因其出色的性能而适用于多种应用领域,包括但不限于:

  • 开关电源(SMPS)
  • 电机驱动器
  • DC-DC转换器
  • 高频开关电路
  • 硬盘驱动的电源管理

此外,考虑到其宽广的工作温度范围,IRF7476TRPBF尤其适合在工业控制和汽车电子等需求较高的环境下使用。

结论 总体来看,IRF7476TRPBF是一款性能强大的N沟道MOSFET,具备高电流处理能力、低导通电阻和良好的热性能等优点,能够满足各种苛刻应用场合的需求。虽然该型号目前已停产,但它在电路设计和元件选择中所展示的价值以及技术特性,依然使其在技术资料和二手市场上具有重要的参考意义。对于寻求高效能与小型化设计的工程师及技术人员来说,IRF7476TRPBF无疑是一个值得考虑的选择。在进行电路设计和元器件选择时,了解其特性将对最终设计的可靠性和效率产生积极影响。

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