WMSIC Electronic Components

Infineon IPD60R600P7SAUMA1

Infineon IPD60R600P7SAUMA1
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Product image

ModelIPD60R600P7SAUMA1
PackageTO-252-2
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IPD60R600P7SAUMA1
Type
INFINEON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IPD60R600P7SAUMA1
Electronic Component
1
Package
TO-252-2
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
FET Type
N
Electronic Component
BM0084327851
Type
Surface Mount
Operating Temperature
40°C ~ 150°C（TJ）
Package / Housing
TO-252-3, DPak, SC-63
Vgs
±20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：Infineon IPD60R600P7SAUMA1 N沟道MOSFET

一、产品简介

Infineon 的 IPD60R600P7SAUMA1 是一款高性能的 N 通道金属氧化物场效应管（MOSFET），专为高级电力应用而设计。该器件具有高达 600V 的漏源电压 (Vdss)，最大连续漏极电流为 6A，适用于各种对功率效率和热管理有严苛要求的电子电路。在广泛的工作温度范围内（-40°C 至 150°C），IPD60R600P7SAUMA1 保证稳定的性能，非常适合在高温恶劣环境中的应用。

二、关键参数

  1. 漏源电压 (Vdss): 该产品的漏源电压高达 600V，这使其适合用于高压应用，如电源转换器、高压驱动电路及工业控制系统。

  2. 连续漏极电流 (Id): 在标准条件下，该器件的最大连续漏极电流为 6A，适合需高电流驱动的场合。

  3. 导通电阻 (Rds On): 在 10V 驱动电压下，对于 1.7A 的电流，导通电阻最大值为 600 毫欧，这有助于降低导通损耗，提高电源效率。

  4. 栅极阈值电压 (Vgs(th)): 该器件的最大栅极阈值电压为 4V（@80μA），适合用于低电压驱动电路，简化电路设计并提高可靠性。

  5. 栅极电荷 (Qg): 最大栅极电荷为 9nC（@10V），这一特性表明其在快速开关应用中表现优异，能够有效减少开关损耗。

  6. 功率耗散与热管理: 最大功率耗散能力为 30W（在 Tc 情况下），有效的热管理是该器件的一大亮点，它支持设计时降低散热问题的复杂性。

  7. 输入电容 (Ciss): 输入电容最大为 363pF（@400V），在设计电路时，能够实现出色的高频性能和开关速度。

三、封装与安装

IPD60R600P7SAUMA1 采用了 TO-252-3（DPAK）封装，安装方式为表面贴装型。这使得该 MOSFET 可便捷地集成到紧凑的电路板设计中，更加方便自动化生产和焊接。DPAK封装具有较低的热阻，帮助器件在高功率应用中保持较低的工作温度。

四、应用场合

Infineon IPD60R600P7SAUMA1 适用于多种高性能电力应用场景，包括但不限于：

  • 电源供应器（AC-DC、DC-DC 转换器）
  • 电动机驱动与控制
  • 照明控制（LED 驱动电路）
  • 工业自动化及控制设备
  • 可再生能源系统（如太阳能逆变器）

五、总结

Infineon 的 IPD60R600P7SAUMA1 N 通道 MOSFET 通过其高漏源电压、低导通电阻及优秀的开关性能，在电力电子领域展示了其广泛的适用性和卓越的性能。凭借先进的半导体技术和可靠的工作特性，工程师可以利用此器件设计高效的电源解决方案，满足现代电子产品对能效和性能的需求。无论是在家用电器还是高端工业设备，IPD60R600P7SAUMA1 都能成为设计人员的最佳选择。

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