WMSIC Electronic Components

Infineon IRF7490TRPBF

Infineon IRF7490TRPBF
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Product image

ModelIRF7490TRPBF
PackageSO-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF7490TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF7490TRPBF
Electronic Component
1
Package
SO-8
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.17g
Electronic Component
1
Electronic Component
BM0098107194
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
4000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：IRF7490TRPBF N沟道 MOSFET

一、产品简介

IRF7490TRPBF是一款高性能N沟道MOSFET，专为电力电子应用设计，具有出色的电压和电流处理能力。该器件由知名半导体制造商Infineon（英飞凌）生产，以其优良的可靠性和高效能在业界广受赞誉。IRF7490TRPBF适用于各种应用，包括电源管理、马达控制、开关电源等场景。具有100V的漏源电压和5.4A的最大连续漏极电流，使其成为多种电子系统中理想的选择。

二、技术参数

IRF7490TRPBF的基本技术参数包括：

  • FET 类型：N沟道MOSFET
  • 漏源电压（Vdss）：100V，适合处理高电压应用
  • 25°C 时的连续漏极电流（Id）：5.4A，为负载提供稳定的电流输出
  • 驱动电压：最大Rds(On) 及最小Rds(On) 為10V
  • 不同Id、Vgs 时导通电阻（Rds(On) 最大值）：在3.2A和10V下，最大导通电阻为39毫欧
  • 门极阈值电压（Vgs(th) 最大值）：在250µA时，最大值为4V，确保在低电压下即可有效驱动
  • 栅极电荷（Qg 最大值）：在10V时为56nC，确保快速开关响应
  • Vgs（最大值）：±20V，允许更大的门极驱动范围
  • 输入电容（Ciss 最大值）：在25V时为1720pF，有助于高频操作
  • 功率耗散（最大值）：2.5W，适应高功率应用
  • 工作温度：-55°C至150°C，广泛适用于严苛环境
  • 安装类型：表面贴装型(SMD)，节省PCB空间
  • 供应商器件封装：8-SO封装，紧凑设计便于散热

三、应用领域

IRF7490TRPBF的特性使其适合应用于以下几个重要领域：

  1. 开关电源：在开关电源设计中，IRF7490可作为高效率的开关元件，用于降压和升压转换。
  2. 马达驱动：该MOSFET可以有效控制直流电动机的启停和转速，提供精确的驱动信号。
  3. 电源管理：应用于电池管理系统，IRF7490能够提供过流和过压保护，延长电池寿命。
  4. 功率放大器：在无线电频率或射频应用中作为功率放大级，提供高增益和高效率。

四、优势特性

  • 低导通电阻：39毫欧的低导通电阻使得设备在导通时的损耗最小，从而提高整体能效。
  • 广泛的工作温度范围：-55°C至150°C的温度适应性使 MOSFET 可用于多种恶劣环境，满足工业及航空电子要求。
  • 高可靠性：英飞凌作为全球领先的电子元器件供应商，确保每一批生产的产品符合行业最高标准，具备良好的长期稳定性与可靠性。

五、结论

综上所述，IRF7490TRPBF是一款多功能、高效能的N沟道MOSFET，适应性强，具备广泛的应用潜力。无论是在电源管理、马达控制，还是高频开关应用中，IRF7490TRPBF都能够提供令人满意的性能，帮助工程师和设计师实现高效的电路设计。其出色的参数和稳定性使其成为现代电子设备中不可或缺的重要元件。

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