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Infineon BSC0923NDI
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSC0923NDI
- Type
- INFINEON
- Minimum package
- 5000 个
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSC0923NDI
- Electronic Component
- 1
- Package
- TISON-8-EP(6x5)
- Electronic Component
- 2 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0229304781
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 1.16nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSC0923NDI 产品概述
一、概述
BSC0923NDI 是英飞凌推出的一款双通道 N 沟道功率 MOSFET，面向中低压、高电流开关应用。器件基于低导通电阻设计，兼顾开关速度与热耗散能力，适用于同步降压转换器、半桥驱动、负载开关和电源管理等场景。封装为 TISON-8-EP (6×5)，带裸露散热焊盘，便于 PCB 热管理。
二、主要参数
- 通道数：2 个 N 沟道
- 漏源耐压 Vdss：30 V
- 连续漏极电流 Id：40 A（单通道，依散热条件）
- 导通电阻 RDS(on)：3.8 mΩ @ Vgs=10 V，Id=20 A
- 阈值电压 Vgs(th)：约 2 V
- 总栅极电荷 Qg：10 nC @ 10 V
- 输入电容 Ciss：1.16 nF @ 15 V
- 反向传输电容 Crss：88 pF @ 15 V
- 耗散功率 Pd：2.5 W（基于规定散热条件）
- 工作温度范围：-55 ℃ ~ +150 ℃
三、器件特点与设计意义
- 低 RDS(on) 意味着在高电流通态下导通损耗小，适合电源级和负载开关。
- 适度的栅极电荷（10 nC）在开关速度与驱动能量之间取得平衡，能在中高频率下表现良好，但在高频应用需考虑驱动损耗。
- 双通道封装便于在同一封装内实现并联或半桥布局，提高系统集成度并简化 PCB 布局。
- TISON-8-EP 的裸露散热焊盘利于热量传导到 PCB，需采取良好散热设计以发挥器件电流能力。
四、应用建议与注意事项
- 驱动电压建议使用 10 V 门极驱动以获得标称 RDS(on)。若使用低压门驱动，应评估导通电阻上升带来的损耗。
- 布局时尽量缩短源-漏回路的寄生电感，门极与驱动器之间可加合适的门极电阻以抑制振铃并控制开关应力。
- 充分利用封装散热焊盘并在 PCB 下方设计多层散热过孔或铜箔，以降低结壳温度。
- 在并联通道或多器件并联时需注意电流均分，必要时配合小差分阻抗或源阻实现均流。
五、选型与替代考量
若项目对开关频率极高或更低导通损耗有更苛刻要求，可考虑更低 RDS(on) 或更小 Qg 的器件；若要求更高 Vdss 或更强耗散，需选择更高耐压或更大 Pd 的型号。最终选型建议参考完整数据手册，核对脉冲极限、热阻和 SOA 等关键参数。
如需本型号完整参数表、典型特性曲线或参考电路，我可为您提供更详细的技术资料与布局建议。
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