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Infineon IRLU3410PBF
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon IRLU3410PBF
- Type
- INFINEON
- Minimum package
- 3000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRLU3410PBF
- Electronic Component
- 1
- Package
- TO-251AA(IPAK)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.73g
- Electronic Component
- 1
- Electronic Component
- BM0264862918
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 79W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRLU3410PBF 产品概述
一、概述
IRLU3410PBF 是英飞凌（Infineon）推出的一款 100V 额定的 N 沟道功率 MOSFET，封装为 TO-251AA（IPAK）。器件定位为逻辑电平驱动的中功率开关元件，适合要求耐压高、开关效率适中的应用场景。
二、主要参数与特性
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：100 V
- 连续漏极电流 Id：17 A
- 导通电阻 RDS(on)：155 mΩ @ VGS = 4 V（逻辑电平驱动）
- 阈值电压 Vgs(th)：约 2 V
- 输入电容 Ciss：≈ 800 pF，输出电容 Coss：≈ 160 pF
- 最大耗散功率 Pd：79 W（实际散热能力依赖封装和散热条件）
- 工作温度范围：-55 ℃ 到 +175 ℃
- 封装：TO-251AA (IPAK)，适合 PCB 安装并具备较好的散热通路
三、性能解读与设计要点
- 逻辑电平特性：在 VGS = 4 V 时 RDS(on) 为 155 mΩ，适合 5V 或接近 4V 的驱动逻辑，便于微控制器直接驱动或通过小驱动器驱动。
- 开关损耗与驱动：Ciss = 800 pF 表明栅极电荷中等偏上，开关时需要注意栅极驱动功率与上升/下降时间，通常建议串联门极电阻以抑制振铃并控制 di/dt。
- 热管理：标称 Pd = 79 W 为封装在理想冷却条件下的限制值，实际电路中需基于 PCB 铜皮、散热片或风冷条件计算结壳温升与允许功耗，关注结壳热阻（请参阅完整数据手册）。
- 可靠性与极限：阈值电压约 2 V，低温/高温下特性会有漂移，设计时保留足够的 VGS 余量，避免在边缘区域工作。
四、典型应用
- 开关电源（高压侧开关、普通降压/升压转换）
- 继电器替代型负载开关与电子开关
- 马达驱动与半桥低侧开关（中小功率）
- 工业与通信设备中的电源管理、保护电路
- 太阳能逆变器或电池保护电路（取决于整体系统设计）
五、选用建议与注意事项
- 若需更低导通损耗，应考虑 RDS(on) 更低的同类器件或并联使用多颗 MOSFET；并联时注意源引脚分流和热均流。
- 在高频开关场合需评估 Coss 与开关能量损失，必要时选择更低 Coss/更快的器件或优化驱动。
- 参考英飞凌完整数据手册获取详细的热阻、极限条件（如 VGS 最大值、Avalanche 能量等）以及典型电路指导，保证设计余量与可靠性。
如需我帮忙根据具体应用（例如某一电源拓扑、开关频率、最大电流与允许温升）计算损耗与散热方案，我可以继续协助。
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